| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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3,667 pcs
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3667 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon IPC50N04S5-5R8 is an N-channel enhancement mode power MOSFET from the OptiMOS™-5 family, specifically qualified for automotive applications (AEC Q101). This device offers a drain-source breakdown voltage of 40V and a low on-state resistance, with a maximum of 5.8 mΩ at VGS=10V and ID=25A.
Key electrical characteristics include a typical gate threshold voltage of 2.8V and dynamic parameters such as input capacitance (Ciss) up to 1090pF and output capacitance (Coss) up to 305pF. The MOSFET supports continuous drain currents of up to 50A at 25°C case temperature and 44A at 100°C case temperature.
Designed for high-temperature operation up to 175°C, the IPC50N04S5-5R8 is housed in a PG-TDSON-8-33 package suitable for surface mounting. It also features a 100% avalanche tested rating and is RoHS compliant, making it a robust choice for demanding automotive power management systems.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 40V.
The typical gate threshold voltage is 2.8V.
The maximum on-state resistance is 7.2mΩ at VGS=7V, ID=25A, and 5.8mΩ at VGS=10V, ID=25A.
The maximum continuous drain current is 50A at TC=25°C and 44A at TC=100°C.
The operating and storage temperature range is -55°C to +175°C.
This MOSFET is in the PG-TDSON-8-33 package.
Yes, this MOSFET is AEC Q101 qualified.