| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
20,444 pcs
|
20444 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request | |
|
77 pcs
|
77 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon IPC100N04S5L-1R5 is an OptiMOS™-5 power transistor, specifically an N-channel enhancement mode logic-level MOSFET designed for automotive applications. It is AEC Q101 qualified and features a 40V drain-source breakdown voltage (Vds) and a maximum continuous drain current (Id) of 100A at 25°C.
Key electrical characteristics include a low drain-source on-state resistance (Rds(on)) of 1.5 mΩ typical at VGS=10V and ID=50A, and 1.5 mΩ typical at VGS=4.5V and ID=50A. The gate threshold voltage (Vgs(th)) ranges from 1.2V to 2.0V. Dynamic characteristics include input capacitance (Ciss) of 5340 pF maximum and output capacitance (Coss) of 1200 pF maximum.
This MOSFET operates at temperatures from -55°C to +175°C and has a power dissipation of 115W at 25°C. It is supplied in a PG-TDSON-8-34 package, suitable for surface mounting. The component is 100% avalanche tested and is RoHS compliant.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.93 | $2.93 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 40V.
The typical gate threshold voltage is 1.6V.
The maximum drain-source on-state resistance is 2.1mΩ at VGS=4.5V, ID=50A.
The maximum continuous drain current is 100A.
The operating temperature range is -55°C to +175°C.
The package type is PG-TDSON-8-34.