| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
8,501 pcs
|
8501 pcs | On Request | 1 | On Request | On Request | 22+ | On Request | On Request |
| Category | |
| Manufacturer Name |
The Infineon Technologies IPC100N04S5-1R9 is an N-channel enhancement mode power MOSFET from the OptiMOS™-5 family, specifically qualified for automotive applications.
This device features a drain-source breakdown voltage of 40V and a maximum drain-source on-state resistance of 1.9 mΩ at a gate-source voltage of 10V and a drain current of 50A. It can handle a continuous drain current of 100A at 25°C case temperature and a pulsed drain current of up to 400A.
Key electrical characteristics include a gate threshold voltage between 2.2V and 3.4V, and various capacitance values such as input capacitance (Ciss) up to 3770pF and output capacitance (Coss) up to 1000pF. Dynamic characteristics include turn-on delay time of 8ns and turn-off delay time of 15ns.
The IPC100N04S5-1R9 is supplied in a PG-TDSON-8-34 package, suitable for surface mounting. It operates at temperatures ranging from -55°C to +175°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $3.20 | $3.20 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 40V.
The typical gate threshold voltage is 2.8V.
The maximum on-state resistance at VGS=10V is 1.9 mΩ.
The continuous drain current rating is 100A at TC=25°C and VGS=10V.
The operating and storage temperature range is -55°C to +175°C.
It is supplied in the PG-TDSON-8-34 package.