IPC100N04S5-1R7 The Infineon IPC100N04S5-1R7 is an automotive-grade N-channel MOSFET with a 40V drain-source breakdown voltage and a maximum continuous drain current of 100A. It is supplied in a PG-TDSON-8-34 package.
Mfr Part #:

IPC100N04S5-1R7

Available from 3 distributors
Mfr Name: Infineon
Infineon
The Infineon IPC100N04S5-1R7 is an automotive-grade N-channel MOSFET with a 40V drain-source breakdown voltage and a maximum continuous drain current of 100A. It is supplied in a PG-TDSON-8-34 package.
✓ Total Stock: 8,151 pcs
$ Price Range: $2.40

IPC100N04S5-1R7 Available from 3 distributors

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IPC100N04S5-1R7 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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Manufacturer Name
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Power Dissipation
Reverse Recovery Time

IPC100N04S5-1R7 Description

Short technical summary and product information.

The Infineon IPC100N04S5-1R7 is a high-performance N-channel power MOSFET designed for automotive applications. It features OptiMOS™-5 technology, offering a drain-source breakdown voltage (VDS) of 40V and a maximum continuous drain current (ID) of 100A at 25°C case temperature.

 

Key electrical characteristics include a low drain-source on-state resistance (RDS(on)) as low as 1.4 mΩ at VGS=10V and ID=50A. The gate threshold voltage (VGS(th)) typically ranges from 2.2V to 3.4V. Dynamic characteristics such as input capacitance (Ciss) are up to 4810 pF, and output capacitance (Coss) is up to 1300 pF.

 

This MOSFET operates within a temperature range of -55°C to +175°C. It is supplied in a PG-TDSON-8-34 surface-mount package. The device is AEC Q101 qualified and RoHS compliant, making it suitable for demanding automotive environments.

IPC100N04S5-1R7 Quick Information

Product Type: MOSFET
Series: OptiMOS™-5
Canonical Name: Infineon IPC100N04S5-1R7 N-channel Power MOSFET
Subcategory: N-Channel Power MOSFET

IPC100N04S5-1R7 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IPC100N04S5-1R7 Estimated Pricing

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1+ $2.40 $2.40

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPC100N04S5-1R7 Features

  • Automotive N-channel power MOSFET.
  • 40V drain-source breakdown voltage.
  • 100A maximum continuous drain current.
  • Low 1.7 mΩ max RDS(on) at 10V.
  • AEC Q101 qualified for automotive use.

IPC100N04S5-1R7 Applications

  • Suitable for automotive power systems.
  • Used in engine control modules.
  • Ideal for DC-DC converters.
  • Applicable in battery management systems.

IPC100N04S5-1R7 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage of the IPC100N04S5-1R7?

The drain-source breakdown voltage is 40V.

What is the typical gate threshold voltage for this MOSFET?

The typical gate threshold voltage is 2.8V.

What is the maximum continuous drain current?

The maximum continuous drain current is 100A.

What is the maximum drain-source on-state resistance?

The maximum drain-source on-state resistance is 1.7 mΩ.

What is the operating temperature range?

The operating and storage temperature range is -55°C to +175°C.

What is the package type for the IPC100N04S5-1R7?

The package is PG-TDSON-8-34.

Is this MOSFET RoHS compliant?

Yes, it is RoHS3 Compliant.

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