| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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5,000 pcs
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5000 pcs | On Request | 1 | On Request | On Request | 1551+ | On Request | On Request | |
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3,101 pcs
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3101 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
50 pcs
|
50 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon IPC100N04S5-1R7 is a high-performance N-channel power MOSFET designed for automotive applications. It features OptiMOS™-5 technology, offering a drain-source breakdown voltage (VDS) of 40V and a maximum continuous drain current (ID) of 100A at 25°C case temperature.
Key electrical characteristics include a low drain-source on-state resistance (RDS(on)) as low as 1.4 mΩ at VGS=10V and ID=50A. The gate threshold voltage (VGS(th)) typically ranges from 2.2V to 3.4V. Dynamic characteristics such as input capacitance (Ciss) are up to 4810 pF, and output capacitance (Coss) is up to 1300 pF.
This MOSFET operates within a temperature range of -55°C to +175°C. It is supplied in a PG-TDSON-8-34 surface-mount package. The device is AEC Q101 qualified and RoHS compliant, making it suitable for demanding automotive environments.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 40V.
The typical gate threshold voltage is 2.8V.
The maximum continuous drain current is 100A.
The maximum drain-source on-state resistance is 1.7 mΩ.
The operating and storage temperature range is -55°C to +175°C.
The package is PG-TDSON-8-34.
Yes, it is RoHS3 Compliant.