| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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3,250 pcs
|
3250 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,999 pcs
|
2999 pcs | On Request | 1 | On Request | On Request | 1551+ | On Request | On Request | |
|
1,469 pcs
|
1469 pcs | On Request | 1 | On Request | On Request | 15+ | On Request | On Request |
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The Infineon IPC100N04S5-1R2 is an OptiMOS™-5 series N-channel power MOSFET suitable for automotive applications. It features enhancement mode and normal level gate operation. The device is AEC Q101 qualified and operates at temperatures up to 175°C.
Key electrical characteristics include a drain-source breakdown voltage of 40V and a low on-state resistance (RDS(on)) as low as 1.0 mΩ at 10V gate-source voltage and 50A drain current. It supports a continuous drain current of 100A at 25°C case temperature and a pulsed drain current of up to 400A.
Dynamic characteristics such as input capacitance (Ciss) are typically 5750pF, and output capacitance (Coss) is typically 1600pF. Gate charge parameters are also specified, with a total gate charge (Qg) typically 99nC.
The MOSFET is housed in a PG-TDSON-8-34 package, designed for surface mounting. It has a thermal resistance from junction to case (RthJC) of 1.0 K/W, enabling efficient heat dissipation.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.14 | $1.14 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum continuous drain current is 100A at TC=25°C and 100A at TC=100°C.
The drain-source breakdown voltage is a minimum of 40V.
The typical on-state resistance is 1.0mΩ at VGS=10V and ID=50A.
The operating temperature range is -55°C to +175°C.
The IPC100N04S5-1R2 is supplied in the PG-TDSON-8-34 package.
Yes, the IPC100N04S5-1R2 is RoHS3 compliant.
The Moisture Sensitivity Level (MSL) is 1.