| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,600 pcs
|
4600 pcs | On Request | 1 | On Request | On Request | 1841+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Avalanche Current | |
| Avalanche Energy | |
| Continuous Drain Current (Nominal @ Tc=100 °C, VGS=10 V) | |
| Continuous Drain Current (Nominal @ Tc=25 °C, VGS=10 V) | |
| Current | |
| Diode Continuous Forward Current | |
| Diode Forward Voltage | |
| Diode Pulse Current | |
| Drain to Source Voltage (Vdss) | |
| Drain-source voltage | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Fall Time | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Gate Charge Total | |
| Gate Threshold Voltage | |
| Gate plateau voltage | |
| Gate-Drain Charge | |
| Gate-Source Charge | |
| Gate-Source Voltage | |
| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Input Capacitance (Typical/Maximum @ Vds = 25 V, Vgs = 0 V, f = 1 MHz) | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| On-State Resistance (Typical/Maximum @ Vgs=10 V, Id=50 A) | |
| Operating Temperature | |
| Operating Temperature Range | |
| Output Capacitance | |
| Power Dissipation | |
| Power Dissipation (Max) | |
| Pulsed Drain Current | |
| Rds On (Max) @ Id, Vgs | |
| Reverse Recovery Charge | |
| Reverse Recovery Time | |
| Reverse Transfer Capacitance | |
| Rise Time | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Thermal Resistance Junction-Case | |
| Turn-Off Delay Time | |
| Turn-On Delay Time | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IPC100N04S402ATMA1 is an N-channel enhancement mode power MOSFET from Infineon Technologies, part of the OptiMOS-T2 series. It features a 40V drain-source voltage rating and a continuous drain current of 100A at Tc=25°C, with a low on-resistance of 2.4 mOhm max at Vgs=10V. The device is capable of handling 150W power dissipation at Tc=25°C and operates over a junction temperature range of -55°C to 175°C.
This MOSFET is AEC qualified and RoHS compliant, with MSL1 moisture sensitivity level. It is packaged in a PG-TDSON-8-23 surface mount package, making it suitable for automated assembly. The device offers fast switching performance with typical turn-on delay of 20ns and rise time of 9ns. It is 100% avalanche tested with a single pulse avalanche energy rating of 315mJ.
Designed for high current and high efficiency applications, the IPC100N04S402ATMA1 is ideal for use in power management systems, DC-DC converters, and motor control circuits. Its low gate charge (79nC typ) and low Rds(on) help minimize conduction and switching losses.
| Qty | Low | High |
|---|---|---|
| 5,000+ | $0.27 | $0.27 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
40 V.
100 A at Tc=25°C, 89 A at Tc=100°C (Vgs=10V).
2.4 mOhm maximum at Vgs=10V, Id=50A; typical 2.2 mOhm.
-55°C to 175°C junction temperature.
Yes, RoHS compliant per datasheet.
PG-TDSON-8-23 surface mount package.
2.0V to 4.0V (min/typ/max) at Vds=Vgs, Id=80µA.