| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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30 pcs
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30 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IPB95R130PFD7ATMA1 is a 950V N-Channel CoolMOS PFD7 superjunction (SJ) power MOSFET from Infineon Technologies. This device is designed for high-efficiency power conversion in lighting and industrial SMPS applications, combining best-in-class performance with ease of use.
Key electrical specifications include a maximum drain-to-source voltage of 950V, maximum on-resistance of 130mOhm at 25.1A and 10V gate drive, and a continuous drain current rating of 36.5A. The typical gate charge is 141nC, and the maximum input capacitance is 4170pF at 400V drain-source voltage. The device also features an integrated ultra-fast body diode with a typical di/dt of 1300A/µs and best-in-class reverse recovery charge.
The IPB95R130PFD7ATMA1 is housed in a surface-mount PG-TO263-3 (D²Pak) package with a maximum power dissipation of 227W. It is suitable for both hard and soft switching topologies, including LLC and ZVS converters, and is fully qualified according to JEDEC for industrial applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $7.54 | $7.54 |
| 10+ | $5.10 | $5.10 |
| 100+ | $3.71 | $3.71 |
| 500+ | $3.55 | $3.55 |
| 1,000+ | $3.31 | $3.31 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) is 950V.
The maximum Rds(on) is 130mOhm at a gate-source voltage of 10V and drain current of 25.1A.
The operating junction temperature range is -55°C to 150°C.
It is available in a surface-mount PG-TO263-3 (D²Pak) package.
The part is listed as RoHS3 compliant, but this status is unverified and should be treated as low confidence.
The typical gate charge (Qg) at Vgs=10V is 141nC.
The maximum power dissipation is 227W at case temperature.