| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
12,853 pcs
|
12853 pcs | On Request | 1 | On Request | On Request | 16+ | On Request | On Request | |
|
99 pcs
|
99 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Input Capacitance | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation | |
| Reverse Recovery Time | |
| SVHC Present |
The Infineon IPB80N08S2-07 is an N-channel enhancement mode power MOSFET from the OptiMOS® family, qualified for automotive AEC Q101 standards. This transistor features a high continuous drain current of 80A at 25°C and 100°C with a VGS of 10V, and a drain-source breakdown voltage of 75V.
Key electrical characteristics include a low drain-source on-state resistance (RDS(on)) as low as 5.5 mΩ at VGS=10V and ID=80A (SMD version), and a gate threshold voltage typically around 3.0V. Dynamic characteristics such as input capacitance (Ciss) of 4700 pF and output capacitance (Coss) of 1260 pF are also specified.
This device operates at temperatures ranging from -55°C to +175°C and has a power dissipation of 300W at 25°C. It is available in the PG-TO263-3-2 package, suitable for surface mounting.
The IPB80N08S2-07 is 100% avalanche tested and features MSL1 up to 260°C peak reflow, making it suitable for demanding automotive applications like valve and solenoid control.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 75V.
The typical gate threshold voltage is 3.0V.
The maximum continuous drain current is 80A.
The maximum operating temperature is 175°C.
It is supplied in the PG-TO263-3-2 package.
Yes, it is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.