| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,810 pcs
|
2810 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Halogen Free | |
| Input Capacitance | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation | |
| Voltage |
The Infineon IPB80N06S4L-07 is an OptiMOS®-T2 Power-Transistor featuring N-channel enhancement mode operation. It is AEC Q101 qualified and designed for automotive applications.
Key electrical specifications include a drain-source breakdown voltage of 60V and a continuous drain current of 80A at 25°C case temperature with a 10V gate-source voltage. The on-state resistance (RDS(on)) is as low as 5.2 mΩ at VGS=10V, ID=80A for the SMD version. It operates within a temperature range of -55°C to +175°C.
This MOSFET is packaged in a PG-TO263-3-2 package, suitable for surface mounting. It also features 100% avalanche tested and is RoHS compliant.
Applications include automotive valve and lighting control, benefiting from its high current capability and low on-resistance.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 60V.
The typical gate threshold voltage is 1.7V.
The maximum continuous drain current at 25°C case temperature is 80A.
The maximum on-state resistance for the SMD version is 6.4 mΩ at VGS=10V, ID=80A.
The operating and storage temperature range is -55°C to +175°C.
The IPB80N06S4L-07 is supplied in the PG-TO263-3-2 package.
Yes, the IPB80N06S4L-07 is RoHS3 Compliant.