Mfr Part #:

IPB80N06S2L-09

Mfr Name: Infineon

The Infineon IPB80N06S2L-09 is an N-channel Power MOSFET designed for high-performance applications. It offers a 55V drain-source voltage and a continuous drain current of 80A.

✓ Total Stock: 20 pcs

$ Price Range: $2.93

IPB80N06S2L-09 Available from 1 distributor

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Bristol Electronics ✓ Non-Authorised Inventory information	20 pcs On Request	20 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

IPB80N06S2L-09 Specifications Quick View

Most important parameters for selection – full specs in datasheet.

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Category	New Products
Manufacturer Name	Infineon
Input Capacitance	2620 pF
Mounting Type	Surface Mount
Power Dissipation	190 W
Reverse Recovery Time	57 ns
SVHC Present	Not Present
Supplier Device Package	PG-TO263-3

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IPB80N06S2L-09 Description

Short technical summary and product information.

The Infineon IPB80N06S2L-09 is an N-channel Logic Level Power MOSFET from the OptiMOS® series. It features a drain-source breakdown voltage of 55V and a continuous drain current of 80A at 25°C case temperature with a 10V gate-source voltage. The MOSFET boasts a low on-state resistance (RDS(on)) as low as 6.6 mΩ at 52A and 10V VGS, making it suitable for efficient power switching applications.

This device operates at temperatures ranging from -55°C to +175°C and has a power dissipation of 190W at 25°C. It is qualified for automotive AEC Q101 standards and features a green package that is lead-free. The MOSFET is available in a TO-263 package, suitable for surface mounting.

Key electrical characteristics include a gate threshold voltage between 1.2V and 2.0V, and dynamic parameters such as input capacitance (Ciss) of 2620pF and gate charge (Qg) of 105nC at 10V. The integrated reverse diode provides continuous forward current capability of 80A.

Designed for demanding applications, the IPB80N06S2L-09 offers high efficiency and reliability. Its logic-level gate drive capability simplifies integration with microcontrollers and other low-voltage control circuitry.

IPB80N06S2L-09 Quick Information

Product Type: Power MOSFET

Canonical Name: Infineon IPB80N06S2L-09 N-channel Logic Level Power MOSFET

Subcategory: N-Channel

IPB80N06S2L-09 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

Lead Free: true

IPB80N06S2L-09 Estimated Pricing

Qty	Low	High
1+	$2.93	$2.93

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPB80N06S2L-09 Features

N-channel logic level enhancement mode MOSFET.
Automotive AEC Q101 qualified.
Ultra low Rds(on) down to 6.6 mΩ.
175°C operating temperature.
Green package, lead free.

IPB80N06S2L-09 Applications

Suitable for high-efficiency power switching.
Ideal for automotive applications.
Logic-level gate drive simplifies control.
Surface mount TO-263 package.

IPB80N06S2L-09 FAQs

7 frequently asked questions generated from this part’s specifications.

What is the drain-source breakdown voltage for the IPB80N06S2L-09?

The drain-source breakdown voltage is 55V.

What is the continuous drain current of the IPB80N06S2L-09?

The continuous drain current is 80A at 25°C case temperature with a 10V gate-source voltage.

What is the typical on-state resistance (RDS(on)) for the IPB80N06S2L-09?

The typical on-state resistance is 6.6 mΩ at 52A drain current and 10V gate-source voltage for the SMD version.

What is the operating temperature range for the IPB80N06S2L-09?

The operating and storage temperature range is -55°C to +175°C.

What package type is the Infineon IPB80N06S2L-09 available in?

The IPB80N06S2L-09 is available in a TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package suitable for surface mounting.

Is the Infineon IPB80N06S2L-09 RoHS compliant?

The RoHS status is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for the IPB80N06S2L-09?

The Moisture Sensitivity Level is 1 Unlimited.