Mfr Part #:

IPB80N06S2L-07

Mfr Name: Infineon

The Infineon IPB80N06S2L-07 is an N-channel Logic Level Power MOSFET designed for automotive applications. It offers a 55V drain-source breakdown voltage and a continuous drain current of 80A.

✓ Total Stock: 7,997 pcs

$ Price Range: $0.99

IPB80N06S2L-07 Available from 1 distributor

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✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Braun Electronic Components ✓ Non-Authorised Inventory information	7,997 pcs On Request	7997 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

IPB80N06S2L-07 Specifications Quick View

Most important parameters for selection – full specs in datasheet.

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Category	New Products
Manufacturer Name	Infineon
Input Capacitance	3160 pF
Mounting Type	Surface Mount
Operating Temperature	175 °C
Power Dissipation	210 W
Reverse Recovery Time	75 ns
SVHC Present	Not Present

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IPB80N06S2L-07 Description

Short technical summary and product information.

The Infineon IPB80N06S2L-07 is an N-channel Logic Level enhancement mode Power MOSFET, qualified to Automotive AEC Q101 standards. This device features an ultra-low Rds(on) and is 100% avalanche tested, making it suitable for demanding automotive applications.

Key electrical specifications include a drain-source breakdown voltage of 55V and a continuous drain current of 80A at 25°C case temperature with VGS=10V. The on-state resistance is as low as 6.7 mΩ at VGS=10V, ID=60A for the SMD version. Dynamic characteristics include input capacitance of 3160pF and output capacitance of 740pF.

This MOSFET operates at temperatures up to 175°C and is available in PG-TO263-3-2 (SMD) and PG-TO220-3-1 (leaded) packages. It is designed with a green, lead-free package and meets MSL1 requirements up to 260°C peak reflow.

Applications include automotive valves and solenoids, where its high current capability and low on-resistance are beneficial.

IPB80N06S2L-07 Quick Information

Product Type: Power MOSFET

Series: S2L

Canonical Name: Infineon IPB80N06S2L-07 N-channel Logic Level Power MOSFET

Subcategory: N-Channel Power MOSFET

IPB80N06S2L-07 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

Lead Free: Lead Free

IPB80N06S2L-07 Estimated Pricing

Qty	Low	High
1+	$0.99	$0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPB80N06S2L-07 Features

Automotive AEC Q101 qualified.
N-channel logic level enhancement mode.
Ultra low Rds(on) for efficiency.
High operating temperature up to 175°C.
Available in TO-263 and TO-220 packages.

IPB80N06S2L-07 Applications

Automotive valves and solenoids.
Power switching applications.
High current DC-DC converters.
Load driver circuits.

IPB80N06S2L-07 FAQs

7 frequently asked questions generated from this part’s specifications.

What is the maximum drain-source breakdown voltage for the IPB80N06S2L-07?

The drain-source breakdown voltage is 55V.

What is the typical gate threshold voltage?

The typical gate threshold voltage is 1.6V.

What is the maximum continuous drain current?

The maximum continuous drain current is 80A.

What is the maximum on-state resistance (Rds(on)) for the SMD version?

The maximum on-state resistance for the SMD version is 6.7 mΩ at VGS=10V and ID=60A.

What is the maximum operating temperature?

The maximum operating temperature is 175°C.

What package types are available?

The IPB80N06S2L-07 is available in PG-TO263-3-2 and PG-TO220-3-1 packages.

Is this MOSFET qualified for automotive applications?

Yes, it is Automotive AEC Q101 qualified.