| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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7,100 pcs
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7100 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request |
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The Infineon IPB80N06S2-H5 is an N-channel enhancement mode power MOSFET designed for automotive applications. It is AEC-Q101 qualified, indicating its suitability for demanding automotive environments.
Key electrical specifications include a drain-source breakdown voltage of 55V and a continuous drain current of 80A at 25°C case temperature. The on-state resistance (Rds(on)) is as low as 5.2 mΩ (SMD version) at a gate-source voltage of 10V and 80A drain current, contributing to high efficiency.
This MOSFET operates over a wide temperature range from -55°C to +175°C. It is available in PG-TO263-3-2 and PG-TO220-3-1 packages, supporting both surface mount and through-hole mounting.
The device features ultra-low Rds(on) and is 100% avalanche tested, ensuring reliability in power switching applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 55V.
The typical gate threshold voltage is 3.0V.
The maximum continuous drain current is 80A.
The maximum Rds(on) for the SMD version is 5.2 mΩ.
The operating temperature range is -55°C to +175°C.
This component is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.