| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
8,000 pcs
|
8000 pcs | On Request | 1 | On Request | On Request | 11+ | On Request | On Request |
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The IPB80N03S4L03 is an N-Channel enhancement mode power MOSFET manufactured by Infineon Technologies using MOSFET (Metal Oxide) technology.
Electrical specifications include a drain-source breakdown voltage of 30V, continuous drain current of 80A at Tc=25°C, and a maximum on-resistance of 3.7mOhm at Id=80A and Vgs=10V. The gate charge is 75nC at 10V, and input capacitance is 5100pF at Vds=25V. Drive voltage range is 4.5V to 10V, with maximum gate-source voltage of ±16V.
The device is offered in a TO-263-3 (D2PAK) surface mount package with supplier package designation PG-TO263-3-1. Maximum power dissipation is 94W at Tc=25°C, and the operating junction temperature range is -55°C to 175°C.
This MOSFET is suitable for high-efficiency switching applications such as DC-DC converters, motor control, and load switching where low on-resistance and high current capability are required.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.73 | $0.73 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30V.
80A at Tc=25°C.
3.7mOhm maximum at Id=80A, Vgs=10V.
TO-263-3 (D2PAK) surface mount package.
-55°C to 175°C junction temperature.
RoHS3 compliant (unverified).
75nC at 10V.