IPB70N10S3L-12 The Infineon IPB70N10S3L-12 is an N-channel automotive MOSFET designed for high-performance applications. It offers a 100V breakdown voltage and a 70A continuous drain current.
Mfr Part #:

IPB70N10S3L-12

Available from 2 distributors
Mfr Name: Infineon
Infineon
The Infineon IPB70N10S3L-12 is an N-channel automotive MOSFET designed for high-performance applications. It offers a 100V breakdown voltage and a 70A continuous drain current.
✓ Total Stock: 2,727 pcs
$ Price Range: $0.71

IPB70N10S3L-12 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
1,727 pcs
1727 pcs On Request 1 On Request On Request 1640+ On Request On Request
Non-Authorised Inventory information
1,000 pcs
1000 pcs On Request 1 On Request On Request On Request On Request On Request

IPB70N10S3L-12 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Industrial Grade
Input Capacitance
Medical Grade
Military Grade
Mounting Type
Power Dissipation
Reverse Recovery Time
Storage Temperature
Tape & Reel

IPB70N10S3L-12 Description

Short technical summary and product information.

The Infineon IPB70N10S3L-12 is an N-channel OptiMOS™-T Power-Transistor. It features a 100V drain-source breakdown voltage and a continuous drain current of 70A at 25°C case temperature with a 10V gate-source voltage. The operating temperature range is -55°C to +175°C.

 

This MOSFET is AEC Q101 qualified and RoHS3 compliant. It has a maximum power dissipation of 125W at 25°C case temperature. The package type is PG-TO263-3-2, suitable for surface mount applications.

 

Key electrical characteristics include a gate threshold voltage between 1.2V and 2.4V, and a low drain-source on-state resistance as low as 9.8mΩ at VGS=10V and ID=70A (SMD version). Dynamic characteristics such as input capacitance (Ciss) can reach up to 5570pF, and total gate charge (Qg) is a maximum of 80nC.

 

The device also includes a reverse diode with a continuous forward current of 70A and a pulse current of 280A. The thermal resistance from junction to case (RthJC) is a low 1.5 K/W.

IPB70N10S3L-12 Quick Information

Product Type: MOSFET
Series: IPB70N10S3L-12
Canonical Name: IPB70N10S3L-12 N-Channel Power MOSFET
Subcategory: N-Channel

IPB70N10S3L-12 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IPB70N10S3L-12 Estimated Pricing

Qty Low High
1+ $0.71 $0.71

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPB70N10S3L-12 Features

  • Automotive AEC Q101 qualified
  • 100V drain-source breakdown voltage
  • 70A continuous drain current
  • 175°C maximum operating temperature
  • RoHS3 compliant

IPB70N10S3L-12 Applications

  • Suitable for automotive inverter applications.
  • Used in DC/DC power converters.
  • Ideal for high-current switching circuits.
  • Applicable in motor control systems.
  • Suitable for high-temperature power switching.

IPB70N10S3L-12 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage?

The drain-source breakdown voltage is 100V.

What is the gate threshold voltage?

The gate threshold voltage is typically 1.7V, with a minimum of 1.2V and a maximum of 2.4V.

What is the maximum continuous drain current?

The maximum continuous drain current is 70A at 25°C case temperature and 48A at 100°C case temperature.

What is the operating temperature range?

The operating and storage temperature range is -55°C to +175°C.

What is the RoHS status?

The RoHS status is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL)?

The Moisture Sensitivity Level is 1 Unlimited.

What is the REACH status?

The REACH status is REACH Unaffected.

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