Mfr Part #:

IPB70N10S3-12

Mfr Name: Infineon

The Infineon IPB70N10S3-12 is an N-channel MOSFET designed for automotive applications. It offers a 100V breakdown voltage and 70A continuous drain current.

✓ Total Stock: 1,514 pcs

$ Price Range: $2.93

IPB70N10S3-12 Available from 2 distributors

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Smaxon Electronics ✓ Non-Authorised Inventory information	1,500 pcs On Request	1500 pcs	On Request	1	On Request	On Request	16+	On Request	On Request
Bristol Electronics ✓ Non-Authorised Inventory information	14 pcs On Request	14 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

IPB70N10S3-12 Specifications Quick View

Most important parameters for selection – full specs in datasheet.

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Category	New Products
Manufacturer Name	Infineon
Input Capacitance	3350 pF
Mounting Type	Surface Mount
Operating Temperature	175 °C
Power Dissipation	125 W
Reverse Recovery Time	100 ns
SVHC Present	Not Present

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IPB70N10S3-12 Description

Short technical summary and product information.

The Infineon IPB70N10S3-12 is an N-channel enhancement mode power MOSFET from the OptiMOS™-T family. It is AEC Q101 qualified and designed for demanding automotive applications, including 48V inverters, due to its 175°C operating temperature and low on-state resistance.

Key electrical characteristics include a 100V drain-source breakdown voltage and a continuous drain current of 70A at 25°C case temperature. The device exhibits a typical on-state resistance of 9.7 mΩ at 10V gate-source voltage and 70A drain current. Dynamic characteristics such as input capacitance (Ciss) are 3350 pF typical, and gate charge (Qg) is 51 nC typical.

Thermal performance is supported by a junction-to-case thermal resistance (RthJC) of 1.2 K/W. The MOSFET is housed in a PG-TO263-3-2 surface-mount package, suitable for automated assembly processes.

This component is RoHS compliant and rated for MSL 1. Its robust design and specifications make it suitable for power management in automotive systems.

IPB70N10S3-12 Quick Information

Product Type: MOSFET

Canonical Name: Infineon IPB70N10S3-12 N-channel MOSFET

Subcategory: N-Channel Power MOSFET

IPB70N10S3-12 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

IPB70N10S3-12 Estimated Pricing

Qty	Low	High
1+	$2.93	$2.93

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPB70N10S3-12 Features

100V drain-source breakdown voltage.
70A continuous drain current.
Low 9.7 mΩ typical on-resistance.
1.2 K/W junction-to-case thermal resistance.
175°C maximum operating temperature.

IPB70N10S3-12 Applications

Ideal for 48V automotive inverters.
Suitable for power management circuits.
Used in automotive engine control.
High-efficiency power conversion.

IPB70N10S3-12 FAQs

7 frequently asked questions generated from this part’s specifications.

What is the maximum continuous drain current?

The maximum continuous drain current is 70 A at 25°C case temperature.

What is the drain-source breakdown voltage?

The drain-source breakdown voltage is 100 V.

What is the typical on-state resistance?

The typical on-state resistance is 9.7 mΩ at 10V gate-source voltage and 70A drain current.

What is the operating temperature range?

The operating and storage temperature range is -55°C to +175°C.

What package is this MOSFET in?

This MOSFET is supplied in the PG-TO263-3-2 package.

Is this product RoHS compliant?

Yes, this product is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL)?

The Moisture Sensitivity Level is 1.