| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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188 pcs
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188 pcs | On Request | 1 | On Request | On Request | 23+ | On Request | On Request | |
|
20 pcs
|
20 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon IPB65R190CFD is an N-channel power MOSFET utilizing Infineon's CoolMOS™ technology. This component is designed for applications requiring high voltage performance, with an operating voltage range specified between 500 V and 950 V.
As a power MOSFET, it is suitable for various power switching applications. The device is presented in a TO-263 package, indicating a surface-mount form factor for integration onto printed circuit boards. Further detailed electrical and thermal characteristics, such as breakdown voltage, current ratings, and thermal resistance, would typically be found in the manufacturer's datasheet.
This MOSFET is part of Infineon's extensive portfolio of power semiconductor devices. Its specific characteristics make it a candidate for power supply designs, motor control, and other high-power conversion systems where efficiency and reliability are paramount. The CoolMOS™ technology is known for its advanced features in high-voltage power applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.93 | $2.93 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The voltage range is 500 V to 950 V.
It uses CoolMOS™ technology.
It is an N-channel power MOSFET.
It is in a TO-263 package.
The mounting type is Surface Mount.