| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,947 pcs
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1947 pcs | On Request | 1 | On Request | On Request | 16+ | On Request | On Request |
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The Infineon Technologies IPB65R190C6 is a high-performance SJ MOSFET designed for efficient power switching applications. It features a drain-source voltage of 650V and a low on-resistance of 190mΩ maximum, ensuring minimal power loss.
This MOSFET is housed in a TO-263-3 surface mount package, making it suitable for compact designs. With a maximum power dissipation of 151W and an operating temperature range of -55°C to 150°C, it is built for demanding environments.
The device offers fast switching characteristics with a typical rise time of 12ns and a fall time of 10ns. Its input capacitance is 1.62nF. The IPB65R190C6 provides all the benefits of a fast-switching SJ MOSFET without sacrificing ease of use.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 650V.
The maximum on-resistance is 190mΩ.
The operating temperature range is -55°C to 150°C.
It is available in a TO-263-3 package.
The maximum power dissipation is 151W.