| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
416 pcs
|
416 pcs | On Request | 1 | On Request | On Request | 1613+ | On Request | On Request | |
|
12 pcs
|
12 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
10 pcs
|
10 pcs | On Request | 1 | On Request | On Request | 16+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Lead Style | |
| Mounting Type |
The Infineon IPB65R045C7 is a high-voltage N-channel power MOSFET from the CoolMOS C7 series. Designed using the superjunction principle, this transistor offers enhanced efficiency and reliability for power management applications.
Key electrical specifications include a maximum drain-source voltage (VDS) of 700V at Tj,max and a maximum on-resistance (RDS(on)) of 45 mΩ. The typical gate charge (Qg) is 93 nC, and it supports a pulse drain current (ID,pulse) of 212A. The output capacitance (Eoss) at 400V is 11.7 µJ.
This MOSFET features Pb-free plating and a halogen-free mold compound, making it suitable for industrial-grade applications. It is supplied in a PG-TO 263 surface-mount package.
Applications include PFC stages and hard-switching PWM stages for computing, server, telecom, UPS, and solar power systems.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.93 | $2.93 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (VDS) at Tj,max for the IPB65R045C7 is 700V.
The maximum on-resistance (RDS(on)) for the IPB65R045C7 is 45 mΩ.
The typical gate charge (Qg) for the IPB65R045C7 is 93 nC.
The pulse drain current (ID,pulse) for the IPB65R045C7 is 212A.
The IPB65R045C7 is supplied in a PG-TO 263 package.
The RoHS Status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.