IPB65R045C7 The Infineon IPB65R045C7 is a 650V N-channel CoolMOS C7 power MOSFET. It offers a low on-resistance of 45 mΩ and a pulse current rating of 212A.
Mfr Part #:

IPB65R045C7

Available from 3 distributors
Mfr Name: Infineon
Infineon
The Infineon IPB65R045C7 is a 650V N-channel CoolMOS C7 power MOSFET. It offers a low on-resistance of 45 mΩ and a pulse current rating of 212A.
✓ Total Stock: 438 pcs
$ Price Range: $2.93

IPB65R045C7 Available from 3 distributors

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416 pcs
416 pcs On Request 1 On Request On Request 1613+ On Request On Request
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12 pcs
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10 pcs
10 pcs On Request 1 On Request On Request 16+ On Request On Request

IPB65R045C7 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Halogen Free
Lead Style
Mounting Type

IPB65R045C7 Description

Short technical summary and product information.

The Infineon IPB65R045C7 is a high-voltage N-channel power MOSFET from the CoolMOS C7 series. Designed using the superjunction principle, this transistor offers enhanced efficiency and reliability for power management applications.

 

Key electrical specifications include a maximum drain-source voltage (VDS) of 700V at Tj,max and a maximum on-resistance (RDS(on)) of 45 mΩ. The typical gate charge (Qg) is 93 nC, and it supports a pulse drain current (ID,pulse) of 212A. The output capacitance (Eoss) at 400V is 11.7 µJ.

 

This MOSFET features Pb-free plating and a halogen-free mold compound, making it suitable for industrial-grade applications. It is supplied in a PG-TO 263 surface-mount package.

 

Applications include PFC stages and hard-switching PWM stages for computing, server, telecom, UPS, and solar power systems.

IPB65R045C7 Quick Information

Product Type: MOSFET
Series: C7
Canonical Name: Infineon CoolMOS C7 N-channel Power MOSFET
Subcategory: N-channel Power MOSFET

IPB65R045C7 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-free plating

IPB65R045C7 Estimated Pricing

Qty Low High
1+ $2.93 $2.93

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPB65R045C7 Features

  • 650V CoolMOS C7 N-channel power MOSFET.
  • Maximum on-resistance of 45 mΩ.
  • Supports 212A pulse drain current.
  • Packaged in a TO-263 surface-mount package.
  • Pb-free and halogen-free materials.

IPB65R045C7 Applications

  • Used in PFC power stages.
  • Suitable for PWM power stages.
  • Applications in computing systems.
  • Used in server power supplies.
  • Applications in telecom equipment.

IPB65R045C7 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the IPB65R045C7?

The maximum drain-source voltage (VDS) at Tj,max for the IPB65R045C7 is 700V.

What is the maximum on-resistance of the IPB65R045C7 MOSFET?

The maximum on-resistance (RDS(on)) for the IPB65R045C7 is 45 mΩ.

What is the typical gate charge for the IPB65R045C7?

The typical gate charge (Qg) for the IPB65R045C7 is 93 nC.

What is the pulse drain current rating of the IPB65R045C7?

The pulse drain current (ID,pulse) for the IPB65R045C7 is 212A.

What package type is the IPB65R045C7 supplied in?

The IPB65R045C7 is supplied in a PG-TO 263 package.

Is the IPB65R045C7 RoHS compliant?

The RoHS Status is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for the IPB65R045C7?

The Moisture Sensitivity Level (MSL) is 1 Unlimited.

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