Mfr Part #:

IPB64N25S320ATMA1

N-Channel MOSFET from Infineon Technologies, rated for 250V drain-source voltage and 64A continuous drain current. Features low on-resistance of 20mΩ max and is housed in a surface-mount TO-263-3 package.

✓ Total Stock: 505 pcs

$ Price Range: $3.01 - $8.23

IPB64N25S320ATMA1 Available from 1 distributor

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Components Technology Group, Inc. ✓ Non-Authorised Inventory information	505 pcs On Request	505 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

IPB64N25S320ATMA1 Description

Short technical summary and product information.

This is an N-channel enhancement mode power MOSFET from Infineon's OptiMOS-T series. It is designed for high efficiency power conversion applications. Key ratings include a drain-source voltage of 250V, continuous drain current of 64A at 25°C (46A at 100°C), and a maximum on-resistance of 20mΩ at Vgs=10V.

The device features a total gate charge of 67nC typical and input capacitance of 5240pF typical, enabling fast switching. It is avalanche rated with single pulse avalanche energy of 270mJ. The operating junction temperature range is -55°C to 175°C.

The MOSFET is offered in a PG-TO263-3-2 surface mount package (D²Pak), which provides excellent thermal performance with a junction-to-case thermal resistance of 0.5 K/W. It is RoHS compliant and MSL1 rated for up to 260°C peak reflow.

IPB64N25S320ATMA1 Quick Information

Product Type: Power MOSFET

Series: OptiMOS-T

Canonical Name: Infineon IPB64N25S3-20 N-Channel MOSFET, 250V, 64A, TO-263-3

Subcategory: N-Channel MOSFET

IPB64N25S320ATMA1 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): MSL1 - Unlimited

REACH Status: REACH Unaffected

IPB64N25S320ATMA1 Estimated Pricing

Qty	Low	High
1+	$8.23	$8.23
10+	$5.57	$5.57
50+	$4.43	$4.43
100+	$4.06	$4.06
500+	$3.69	$3.69
1,000+	$3.03	$3.03
3,000+	$3.01	$3.01

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPB64N25S320ATMA1 Features

N-channel enhancement mode power MOSFET.
Rated for 250V drain-source voltage.
Continuous drain current up to 64A.
Low on-resistance of 20mΩ maximum.
Surface mount TO-263-3 (D²Pak) package.

IPB64N25S320ATMA1 Applications

Used in high-efficiency DC-DC converters.
Suitable for motor control applications.
Ideal for automotive power systems.
Applicable in switched mode power supplies.

IPB64N25S320ATMA1 FAQs

5 frequently asked questions generated from this part’s specifications.

What is the drain-source voltage rating?

250V.

What package is the IPB64N25S320ATMA1 available in?

Surface mount TO-263-3 (D²Pak) package, also known as PG-TO263-3-2.

What is the operating temperature range?

-55°C to 175°C junction temperature.

Is the IPB64N25S320ATMA1 RoHS compliant?

Yes, it is RoHS3 compliant (Green Product).

What is the maximum continuous drain current?

64A at Tc=25°C with Vgs=10V; 46A at Tc=100°C.

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	Infineon Technologies
AEC Qualified	Yes
Automotive Grade	Yes
Current	64A (Tc)
Drain to Source Voltage (Vdss)	250 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	7000 pF @ 25 V
Lead Style	Gull Wing
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 175°C
Power Dissipation (Max)	300 W
Rds On (Max) @ Id, Vgs	20mOhm @ 64A, 10V
Reverse Recovery Time (trr)	174 ns
Supplier Device Package	PG-TO263-3-2
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±20 V
Vgs(th) (Max) @ Id	4V @ 270µA