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IPB64N25S3-20 The Infineon IPB64N25S3-20 is an N-channel OptiMOS®-T Power MOSFET with a 250V breakdown voltage and 64A continuous drain current. It is supplied in a PG-TO263-3-2 package.
Mfr Part #:

IPB64N25S3-20

Available from 2 distributors
Mfr Name: Infineon
Infineon
The Infineon IPB64N25S3-20 is an N-channel OptiMOS®-T Power MOSFET with a 250V breakdown voltage and 64A continuous drain current. It is supplied in a PG-TO263-3-2 package.
✓ Total Stock: 9,865 pcs
$ Price Range: $2.21

IPB64N25S3-20 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Optech Co.,Limited ✓
Non-Authorised Inventory information
8,385 pcs
On Request
8385 pcs On Request 1 On Request On Request 1808 On Request On Request
Xingangxin ✓
Non-Authorised Inventory information
1,480 pcs
On Request
1480 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

IPB64N25S3-20 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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Manufacturer Name
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Power Dissipation
Reverse Recovery Time
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IPB64N25S3-20 Description

Short technical summary and product information.

The Infineon IPB64N25S3-20 is an N-channel enhancement mode OptiMOS®-T Power MOSFET designed for high-performance applications. It features a maximum drain-source breakdown voltage of 250V and a continuous drain current of 64A at 25°C.

 

Key electrical characteristics include a low drain-source on-state resistance of 20mΩ maximum at VGS=10V and ID=64A. Dynamic characteristics such as input capacitance (Ciss) can reach up to 7000pF, and gate charge (Qg) is typically 89nC.

 

This MOSFET operates within a temperature range of -55°C to +175°C and has a thermal resistance junction-to-case of 0.5 K/W. It is AEC qualified and RoHS compliant.

 

The component is housed in a PG-TO263-3-2 surface-mount package.

IPB64N25S3-20 Quick Information

Product Type: Power MOSFET
Series: IPB64N25S3-20
Canonical Name: IPB64N25S3-20 OptiMOS®-T Power-Transistor
Subcategory: N-channel Power MOSFET

IPB64N25S3-20 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IPB64N25S3-20 Estimated Pricing

Qty Low High
1+ $2.21 $2.21

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPB64N25S3-20 Features

  • N-channel enhancement mode MOSFET.
  • 250V drain-source breakdown voltage.
  • 64A continuous drain current.
  • 20mΩ maximum on-state resistance.
  • AEC qualified and RoHS compliant.

IPB64N25S3-20 Applications

  • Suitable for automotive power switching applications.
  • Used in high-current motor control circuits.
  • Ideal for power supply and inverter designs.
  • Applicable in high-voltage switching environments.
  • Suitable for load switching in industrial equipment.

IPB64N25S3-20 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source breakdown voltage?

The maximum drain-source breakdown voltage is 250V.

What is the typical gate threshold voltage?

The typical gate threshold voltage is 3.0V.

What is the maximum drain-source on-state resistance?

The maximum drain-source on-state resistance is 20mΩ.

What is the continuous drain current at 25°C?

The continuous drain current at 25°C is 64A.

What is the operating temperature range?

The operating and storage temperature range is -55°C to +175°C.

What is the package type?

The package type is PG-TO263-3-2.

Is this product RoHS compliant?

This product is RoHS3 Compliant.

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