| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
37 pcs
|
37 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IPB60R299CPAATMA1 is an N-Channel power MOSFET from Infineon Technologies, designed for high-voltage switching applications. It features a drain-source voltage rating of 600V and a continuous drain current of 11A at case temperature. The on-resistance is typically 299mOhm maximum at 6.6A and 10V gate drive. The device offers a gate charge of 29nC at 10V, which enables efficient switching performance. The MOSFET is housed in a surface-mount TO-263-3 (D²Pak) package, suitable for automated assembly. It operates over a junction temperature range of -40°C to 150°C. The part is RoHS3 compliant (unverified) and has an MSL level of 1. This MOSFET is suitable for power supply, adapter, and lighting applications where high efficiency and reliability are required.
| Qty | Low | High |
|---|---|---|
| 1+ | $4.14 | $4.14 |
| 1,000+ | $1.49 | $1.49 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
600V.
TO-263-3 (D²Pak, 2 leads + tab).
-40°C to 150°C (junction).
It is listed as RoHS3 compliant, but this is unverified. Review manufacturer documentation for confirmation.
Maximum 299mOhm at 6.6A and 10V gate drive.
29nC at 10V gate-source voltage.