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1,000 pcs
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1000 pcs | On Request | 1 | On Request | On Request | 15+ | On Request | On Request | |
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30 pcs
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30 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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IPB60R299CP is an N-Channel power MOSFET manufactured by Infineon Technologies. It is designed for high-voltage power switching applications, with a maximum drain-to-source voltage of 600V and a continuous drain current of 11A at case temperature. The device features a maximum on-resistance of 299mΩ at 10V gate drive and 6.6A drain current, enabling efficient conduction in high-voltage circuits.
The MOSFET uses metal-oxide semiconductor technology and supports gate-source voltages up to ±20V. Threshold voltage is typically 3.5V at 440µA. With an input capacitance of 1100pF and a gate charge of 29nC, the device offers fast switching performance suitable for power converters and inverters.
Power dissipation is rated at 96W at case temperature, and the operating junction temperature range is -40°C to 150°C. The IPB60R299CP comes in a TO-263-3 (D2PAK) surface-mount package, specifically the PG-TO263-3-2 supplier device package, which provides good thermal transfer for high-power designs.
This MOSFET is commonly used in switched-mode power supplies, power factor correction, and motor control applications. Its 600V rating and low on-resistance make it suitable for high-voltage power management circuits.
The maximum drain-to-source voltage is 600V.
The maximum continuous drain current is 11A at case temperature.
The maximum on-resistance is 299mΩ at 6.6A drain current and 10V gate-source voltage.
The device is available in a TO-263-3 (D2PAK) surface-mount package with supplier device package PG-TO263-3-2.
The operating junction temperature range is -40°C to 150°C.
The device is listed as RoHS3 compliant, though this status is unverified.
The maximum gate charge is 29nC at 10V gate-source voltage.