| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
293 pcs
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293 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IPB60R190P6ATMA1 is an N-Channel enhancement mode power MOSFET from Infineon's CoolMOS P6 series, based on superjunction technology. It is designed for high efficiency in hard-switching and resonant applications.
Key electrical specifications include a drain-source voltage rating of 600V, continuous drain current of 20.2A at 25°C, and a maximum on-resistance of 190mOhm at 10V gate drive. The device features a typical gate charge of 37nC and input capacitance of 1750pF.
The IPB60R190P6 is supplied in a surface-mount PG-TO263-3 (D2PAK) package. It is rated for operation from -55°C to +150°C junction temperature, with a maximum power dissipation of 151W at 25°C case temperature.
The maximum drain-source voltage is 600V, with a capability up to 650V at maximum junction temperature.
It is supplied in a surface-mount PG-TO263-3 (D2PAK) package.
The junction temperature range is -55°C to +150°C.
The part is listed as RoHS3 compliant, but this is based on distributor data without a verified certificate.
The maximum on-resistance is 190 milliohms at a gate-source voltage of 10V and drain current of 7.6A.
The continuous drain current is 20.2 amperes at a case temperature of 25°C.