| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
6,020 pcs
|
6020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IPB60R180P7ATMA1 is an N-Channel 600V CoolMOS P7 power MOSFET from Infineon Technologies, part of the 7th generation superjunction platform. This MOSFET is designed for high-voltage switching applications, offering low conduction and switching losses. It is fully qualified according to JEDEC for industrial applications.
Key electrical specifications include a maximum drain-source voltage of 600V (650V at Tj,max), continuous drain current of 18A at Tc, and a pulsed drain current of 53A. The maximum on-resistance is 180mOhm at Vgs=10V. Typical gate charge is 25nC, and input capacitance is 1081pF at Vds=400V. The device also features a body diode with a maximum commutation rate of 900A/µs.
The CoolMOS P7 platform provides excellent ESD robustness (>2kV HBM), low ringing tendency, and rugged body diode for hard commutation. These characteristics make it suitable for both hard switching topologies (e.g., PFC, PWM) and soft switching resonant converters (e.g., LLC). The device is optimized for applications requiring high efficiency and power density.
Housed in a D2PAK (TO-263-3) surface mount package, the IPB60R180P7ATMA1 supports compact PCB layouts and efficient thermal management. The operating junction temperature range is -55°C to 150°C. Maximum power dissipation is 72W at case temperature.
| Qty | Low | High |
|---|---|---|
| 1+ | $3.34 | $3.34 |
| 10+ | $2.17 | $2.17 |
| 100+ | $1.51 | $1.51 |
| 500+ | $1.22 | $1.22 |
| 1,000+ | $1.12 | $1.12 |
| 2,000+ | $1.11 | $1.11 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 600V (650V at Tj,max).
It comes in a D2PAK (TO-263-3) surface mount package with supplier package designation PG-TO263-3.
The operating junction temperature range is -55°C to 150°C.
According to existing database records, it is RoHS3 compliant, but this has not been verified with the datasheet. Verification is recommended.
The maximum continuous drain current is 18A at case temperature (Tc).
The maximum on-resistance is 180mOhm at Vgs=10V and Id=5.6A.
The typical total gate charge is 25nC at Vgs=10V.