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IPB60R120P7 The IPB60R120P7 is a 650V N-Channel power MOSFET from Infineon with 120mOhm on-resistance. It is housed in a surface-mount PG-TO 263-3 package.
Mfr Part #:

IPB60R120P7

Available from 1 distributors
Mfr Name: Infineon
Infineon
The IPB60R120P7 is a 650V N-Channel power MOSFET from Infineon with 120mOhm on-resistance. It is housed in a surface-mount PG-TO 263-3 package.
✓ Total Stock: 3,593 pcs

IPB60R120P7 Available from 1 distributor

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IPB60R120P7 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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IPB60R120P7 Description

Short technical summary and product information.

The IPB60R120P7 is a 650V N-Channel power MOSFET from Infineon. It features a maximum on-resistance of 120mOhm and a typical gate charge of 36nC. The device can handle a pulsed drain current of 78A and has an output capacitance energy of 4.0µJ at 400V. The body diode offers a dI/dt of 900A/µs, and the MOSFET is ESD robust with >2kV HBM rating.

 

This MOSFET is designed for high-voltage switching applications where low on-resistance and fast switching are required. The PG-TO 263-3 surface-mount package enables efficient PCB assembly and thermal management. The specifications are suitable for power supply and conversion circuits.

IPB60R120P7 Quick Information

Product Type: MOSFET
Series: CoolMOS P7
Canonical Name: IPB60R120P7 N-Channel Power MOSFET
Subcategory: N-Channel MOSFET

IPB60R120P7 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IPB60R120P7 Features

  • 650V drain-source voltage rating.
  • 120mOhm maximum on-resistance.
  • 36nC typical gate charge.
  • 78A pulsed drain current capability.
  • ESD robust >2kV HBM.

IPB60R120P7 Applications

  • Designed for PFC stages in power supplies
  • Used in hard switching PWM stages
  • Suitable for resonant switching LLC topologies
  • Applied in server and telecom power systems
  • Ideal for adapter and LCD TV power units

IPB60R120P7 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the IPB60R120P7?

650V maximum at Tj,max.

What is the package type of the IPB60R120P7?

PG-TO 263-3 surface mount package.

What is the typical gate charge of the IPB60R120P7?

36 nC.

What is the maximum on-resistance of the IPB60R120P7?

120 mOhm.

What is the pulsed drain current rating of the IPB60R120P7?

78 A.

What is the ESD robustness of the IPB60R120P7?

>2kV HBM.

What is the output capacitance energy of the IPB60R120P7?

4.0 µJ at 400V.

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