| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
33 pcs
|
33 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IPB60R120C7ATMA1 is a 650V N-Channel power MOSFET from Infineon's CoolMOS C7 series, based on the superjunction (SJ) principle. This device is designed for high-efficiency power conversion in hard and soft switching topologies, such as PFC and LLC converters. Key specifications include a drain-source voltage of 650V (VDS @ Tj,max), continuous drain current of 31A (at junction temperature below 150°C) or 19A (at case temperature), maximum on-resistance of 120mOhm at Id=7.8A and Vgs=10V, and typical gate charge of 34nC. The input capacitance (Ciss) is 1500pF at Vds=400V. The MOSFET features increased dv/dt ruggedness to 120V/ns, typical Eoss of 4µJ at 400V, and body diode di/dt of 360A/µs. Packaged in a surface-mount TO-263-3 (D²Pak) with PG-TO263-3-2 supplier package, this device is suitable for high-power-density SMPS applications in computing, server, telecom, and solar power systems. The CoolMOS C7 technology offers best-in-class figures of merit (RDS(on)*Eoss and RDS(on)*Qg) for improved efficiency.
| Qty | Low | High |
|---|---|---|
| 1+ | $5.25 | $5.25 |
| 10+ | $3.44 | $3.44 |
| 100+ | $2.56 | $2.56 |
| 500+ | $2.15 | $2.15 |
| 1,000+ | $1.99 | $1.99 |
| 2,000+ | $1.87 | $1.87 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
650V (VDS @ Tj,max).
TO-263-3 (D²Pak) with surface mount.
-55°C to 150°C (junction temperature).
It is listed as RoHS3 Compliant, but this status is unverified and should be treated as low confidence.
34 nC typical at Vgs=10V.
66 A.
Maximum 120 mOhm at Id=7.8A, Vgs=10V.