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IPB60R120C7 The Infineon Technologies IPB60R120C7 is a 650V CoolMOS C7 Power MOSFET. It offers a low on-resistance of 120mΩ and is suitable for high-performance SMPS applications.
Mfr Part #:

IPB60R120C7

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
The Infineon Technologies IPB60R120C7 is a 650V CoolMOS C7 Power MOSFET. It offers a low on-resistance of 120mΩ and is suitable for high-performance SMPS applications.
✓ Total Stock: 736 pcs
$ Price Range: $3.20

IPB60R120C7 Available from 1 distributor

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Rayichip ✓
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736 pcs
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IPB60R120C7 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Gate Charge
Industrial Grade
Medical Grade
Military Grade
Mounting Type
Tape & Reel
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IPB60R120C7 Description

Short technical summary and product information.

The Infineon Technologies IPB60R120C7 is a high-voltage power MOSFET from the CoolMOS C7 series, designed using the superjunction principle. This transistor features a maximum breakdown voltage of 650V and a maximum on-resistance of 120mΩ. It has a typical gate charge of 34nC and a continuous drain current rating of 31A at Tj<150°C.

 

Designed for applications such as PFC and PWM stages in high-performance switch-mode power supplies (SMPS), this MOSFET is suitable for computing, server, telecom, and solar power systems. Its features include increased MOSFET dv/dt ruggedness to 120V/ns and best-in-class FOM (RDS(on)*Eoss and RDS(on)*Qg), enabling higher system efficiency and power density.

 

The IPB60R120C7 is packaged in a PG-TO 263 surface-mount package. It is qualified for industrial-grade applications according to JEDEC standards.

IPB60R120C7 Quick Information

Product Type: Power MOSFET
Series: CoolMOS C7
Canonical Name: Infineon Technologies IPB60R120C7 CoolMOS C7 Power MOSFET
Subcategory: Power MOSFET

IPB60R120C7 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IPB60R120C7 Estimated Pricing

Qty Low High
1+ $3.20 $3.20

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPB60R120C7 Features

  • 650V Drain-Source Breakdown Voltage.
  • 120mΩ maximum On-Resistance.
  • 34nC typical Gate Charge.
  • 31A continuous Drain Current.
  • PG-TO 263 Surface Mount Package.

IPB60R120C7 Applications

  • Suitable for PFC and PWM stages.
  • Used in high-performance SMPS.
  • Ideal for server and telecom power.
  • Applicable in solar power systems.

IPB60R120C7 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum Drain-Source Voltage for the IPB60R120C7?

The maximum Drain-Source Voltage (VDS) at Tj,max is 650V.

What is the maximum On-Resistance of the IPB60R120C7?

The maximum On-Resistance (RDS(on)) is 120mΩ.

What is the typical Gate Charge for this MOSFET?

The typical Gate Charge (Qg) is 34nC.

What is the continuous drain current rating?

The continuous drain current (ID) is 31A at Tj<150°C.

What package type is the IPB60R120C7 available in?

It is available in the PG-TO 263 package.

What is the RoHS status of the IPB60R120C7?

The RoHS status is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for this component?

The Moisture Sensitivity Level (MSL) is 1 Unlimited.

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