| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
13,000 pcs
|
13000 pcs | On Request | 1 | On Request | On Request | 2039+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Termination Style | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IPB60R099CPAATMA1 is an N-Channel MOSFET from Infineon's CoolMOS CPA series, designed for high-efficiency power conversion. It features a drain-source breakdown voltage of 600V (minimum) and a continuous drain current of 31A at Tc=25°C (19A at Tc=100°C). The device offers a low maximum on-resistance of 105mΩ at Id=18A and Vgs=10V, with a typical gate charge of 60nC, enabling fast switching and reduced losses.
This MOSFET is AEC Q101 qualified, making it suitable for automotive applications such as DC/DC converters. It is rated for a maximum power dissipation of 255W at Tc=25°C and has a junction-to-case thermal resistance of 0.5 K/W. The device also features high avalanche energy capability (800mJ single pulse) and dv/dt ruggedness (50 V/ns).
The IPB60R099CPAATMA1 is supplied in a surface-mount TO-263-3 (D²Pak) package with a PG-TO263-3-2 supplier device package. It has an MSL of 1 (unlimited) and is RoHS3 compliant. The package supports reflow soldering at up to 245°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $8.77 | $8.77 |
| 10+ | $5.97 | $5.97 |
| 50+ | $4.77 | $4.77 |
| 100+ | $4.39 | $4.39 |
| 500+ | $4.33 | $4.33 |
| 1,000+ | $3.54 | $3.54 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum drain-source breakdown voltage is 600V.
The continuous drain current is 31A at Tc=25°C and 19A at Tc=100°C.
The maximum on-resistance is 105 mΩ at Id=18A and Vgs=10V.
The typical gate charge is 60 nC at Vgs=10V.
The operating junction temperature range is -40°C to 150°C.
Yes, it is RoHS3 compliant as per the datasheet.
The device is available in a TO-263-3 (D²Pak) surface mount package.