| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,667 pcs
|
3667 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Mounting Type | |
| Technology | |
| Transistor Type |
The IPB60R099C6 is a high-voltage N-channel Power MOSFET manufactured by Infineon, utilizing the advanced CoolMOS™ technology. It offers a maximum breakdown voltage of 950V, making it suitable for high-voltage switching applications. The device is designed for surface mount assembly in a TO-263-3 (D²Pak) package with two leads and a tab. This package provides efficient thermal management and is commonly used in power supplies, inverters, and motor drives. As a CoolMOS™ device, it benefits from reduced switching losses and improved efficiency compared to traditional MOSFETs. The transistor type is N-channel, and it is classified as a Power MOSFET.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
950V.
TO-263-3, D²Pak (2 Leads + Tab).
CoolMOS™ technology from Infineon.
N-channel.
Power MOSFET.