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IPB60R080P7 The Infineon IPB60R080P7 is a 600V CoolMOS P7 series N-channel power MOSFET. It offers low switching and conduction losses, making it suitable for various high-voltage power applications.
Mfr Part #:

IPB60R080P7

Available from 1 distributors
Mfr Name: Infineon
Infineon
The Infineon IPB60R080P7 is a 600V CoolMOS P7 series N-channel power MOSFET. It offers low switching and conduction losses, making it suitable for various high-voltage power applications.
✓ Total Stock: 2,219 pcs

IPB60R080P7 Available from 1 distributor

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Optech Co.,Limited ✓
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2,219 pcs
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2219 pcs On Request 1 On Request On Request 2018 On Request On Request
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IPB60R080P7 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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Gate Charge
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IPB60R080P7 Description

Short technical summary and product information.

The Infineon IPB60R080P7 is a 600V CoolMOS P7 series N-channel power MOSFET designed for high-voltage power applications. This transistor utilizes Infineon's advanced superjunction technology, offering a revolutionary approach to high voltage power MOSFETs.

 

Key electrical specifications include a maximum Drain-Source Voltage (Vds) of 650V and a maximum On-Resistance (Rds(on)) of 80mΩ. The typical Gate Charge (Qg) is 51nC, and it supports a pulsed drain current (ID,pulse) of 110A. The energy loss (Eoss) at 400V is 5.5µJ, and the body diode exhibits a diF/dt rating of 900 A/µs.

 

This MOSFET is designed for efficiency, featuring significant reductions in switching and conduction losses, leading to cooler operation and more compact designs. It boasts excellent ESD robustness greater than 2kV (HBM).

 

The IPB60R080P7 is housed in a D²PAK (PG-TO 263-3) surface-mount package, facilitating integration into various power supply designs. Its features make it suitable for applications such as PFC stages, hard-switching PWM stages, and resonant switching stages found in PC Silverbox, adapters, TVs, lighting, servers, and UPS systems.

IPB60R080P7 Quick Information

Product Type: MOSFET
Series: CoolMOS P7
Canonical Name: Infineon IPB60R080P7 600V CoolMOS P7 Power Transistor
Subcategory: N-Channel Power MOSFET

IPB60R080P7 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IPB60R080P7 Features

  • 650V maximum Drain-Source Voltage.
  • 80mΩ maximum On-Resistance.
  • 51nC typical Gate Charge.
  • 110A pulsed Drain Current.
  • D2PAK surface-mount package.

IPB60R080P7 Applications

  • Suitable for PFC stages.
  • Used in hard-switching PWM stages.
  • Applicable to resonant switching stages.
  • Ideal for adapters and power supplies.
  • Designed for server and telecom applications.

IPB60R080P7 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the IPB60R080P7?

650V maximum.

What package is the IPB60R080P7 available in?

D2PAK (PG-TO 263-3) surface mount package.

What is the on-resistance of the IPB60R080P7?

80mΩ maximum.

What is the gate charge of the IPB60R080P7?

51nC typical.

What is the pulsed drain current rating of the IPB60R080P7?

110A.

What is the body diode di/dt capability of the IPB60R080P7?

900A/µs.

What is the output capacitance energy loss of the IPB60R080P7?

5.5µJ at 400V.

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