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IPB60R060P7 The Infineon IPB60R060P7 is a 600V N-channel Power MOSFET from the CoolMOS P7 series. It offers low conduction and switching losses with a maximum RDS(on) of 60mΩ.
Mfr Part #:

IPB60R060P7

Available from 2 distributors
Mfr Name: Infineon
Infineon
The Infineon IPB60R060P7 is a 600V N-channel Power MOSFET from the CoolMOS P7 series. It offers low conduction and switching losses with a maximum RDS(on) of 60mΩ.
✓ Total Stock: 13,070 pcs

IPB60R060P7 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Optech Co.,Limited ✓
Non-Authorised Inventory information
8,333 pcs
On Request
8333 pcs On Request 1 On Request On Request 21+ On Request On Request
Xingangxin ✓
Non-Authorised Inventory information
4,737 pcs
On Request
4737 pcs On Request 1 On Request On Request On Request On Request On Request
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IPB60R060P7 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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Gate Charge
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IPB60R060P7 Description

Short technical summary and product information.

The Infineon IPB60R060P7 is a 600V N-channel Power MOSFET belonging to the CoolMOS P7 generation. This technology is designed for high-voltage power applications, offering a balance of performance and ease of use.

 

Key electrical specifications include a maximum Drain-Source Voltage (VDS) of 650V and a maximum On-Resistance (RDS(on)) of 60mΩ. It features a typical Gate Charge (Qg) of 67nC and a pulsed drain current (ID,pulse) of 151A. The energy in output capacitance (Eoss) at 400V is 7.1µJ, and the body diode exhibits a diF/dt rating of 900A/µs.

 

Designed for efficiency, the CoolMOS P7 platform significantly reduces switching and conduction losses, leading to cooler operation and more compact designs. It is suitable for hard and soft switching applications such as PFC and LLC stages.

 

The IPB60R060P7 is housed in a D2PAK surface mount package (PG-TO 263-3). Its robust design includes excellent ESD protection (>2kV HBM), making it suitable for industrial applications.

IPB60R060P7 Quick Information

Product Type: MOSFET
Series: CoolMOS P7
Canonical Name: Infineon IPB60R060P7 600V CoolMOS P7 Power MOSFET
Subcategory: Power MOSFET

IPB60R060P7 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IPB60R060P7 Features

  • 600V N-channel CoolMOS P7 Power MOSFET.
  • Low conduction and switching losses.
  • 650V maximum Drain-Source Voltage.
  • 60mΩ maximum On-Resistance.
  • D2PAK surface mount package.

IPB60R060P7 Applications

  • Suitable for PFC and LLC stages.
  • Used in PC Silverbox and adapters.
  • Applicable for server and telecom power.
  • Ideal for lighting and UPS systems.

IPB60R060P7 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum Drain-Source Voltage for the IPB60R060P7?

The maximum Drain-Source Voltage (VDS) at Tj,max is 650V.

What is the maximum On-Resistance of the IPB60R060P7 MOSFET?

The maximum On-Resistance (RDS(on)) is 60mΩ.

What is the typical Gate Charge for the IPB60R060P7?

The typical Gate Charge (Qg) is 67nC.

What package type is the IPB60R060P7 MOSFET supplied in?

The IPB60R060P7 is supplied in a D2PAK package, specifically PG-TO 263-3.

What is the RoHS status of the IPB60R060P7?

The RoHS status is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for the IPB60R060P7?

The Moisture Sensitivity Level (MSL) is 1 Unlimited.

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