| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,883 pcs
|
1883 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request | |
|
1,852 pcs
|
1852 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request |
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| Manufacturer Name | |
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| Tape & Reel |
The Infineon IPB60R040C7 is a high-performance N-channel power MOSFET from the CoolMOS C7 series. Designed with superjunction technology, it offers a maximum drain-source voltage of 650V and a low maximum on-resistance of 40mΩ. This device is suitable for hard and soft switching applications, including PFC and high-performance LLC stages in SMPS.
Key electrical characteristics include a typical gate charge of 107nC, a pulse drain current of 211A, and a continuous drain current of 73A at Tj<150°C. The MOSFET also features increased dv/dt ruggedness up to 120V/ns, contributing to higher efficiency and system reliability.
Packaged in a PG-TO 263 surface-mount package, the IPB60R040C7 is qualified for industrial-grade applications according to JEDEC standards. Its design enables higher switching frequencies and increased power density solutions, making it suitable for demanding applications such as servers, telecom equipment, and solar power systems.
| Qty | Low | High |
|---|---|---|
| 1+ | $8.09 | $8.09 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (VDS) at Tj,max is 650V.
The maximum on-resistance (RDS(on)) is 40mΩ.
The typical gate charge (Qg) is 107nC.
The continuous drain current (ID,continuous) is 73A at Tj<150°C.
The IPB60R040C7 is supplied in a PG-TO 263 package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.