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IPB50R299CP The Infineon IPB50R299CP is an N-Channel Power MOSFET designed for surface mounting. It offers a 500V Drain-Source Voltage and a maximum RDS(on) of 299mΩ.
Mfr Part #:

IPB50R299CP

Available from 1 distributors
Mfr Name: Infineon
Infineon
The Infineon IPB50R299CP is an N-Channel Power MOSFET designed for surface mounting. It offers a 500V Drain-Source Voltage and a maximum RDS(on) of 299mΩ.
✓ Total Stock: 39 pcs
$ Price Range: $2.93

IPB50R299CP Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Bristol Electronics ✓
Non-Authorised Inventory information
39 pcs
On Request
39 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

IPB50R299CP Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Industrial Grade
Input Capacitance
Lead Style
Mounting Type
SVHC Present
Storage Temperature
Tape & Reel
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IPB50R299CP Description

Short technical summary and product information.

The Infineon IPB50R299CP is a high-performance N-Channel Power MOSFET. It is housed in a TO-263-3 surface mount package, making it suitable for various power applications.

 

Key electrical characteristics include a maximum Drain-Source Voltage of 500V and a maximum on-resistance (RDS(on)) of 299mΩ at a gate-source voltage of 10V. The device can handle a maximum power dissipation of 104W. It also features typical rise and fall times of 14ns and 12ns, respectively, and an input capacitance of 1.19nF.

 

This MOSFET operates within a temperature range of -55°C to 150°C. Its robust specifications make it a reliable component for power switching and control circuits where efficiency and performance are critical.

IPB50R299CP Quick Information

Product Type: Power Transistor
Series: CoolMOS CP
Canonical Name: Infineon IPB50R299CP N-Channel Power MOSFET
Subcategory: N-Channel

IPB50R299CP Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IPB50R299CP Estimated Pricing

Qty Low High
1+ $2.93 $2.93

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPB50R299CP Features

  • 500V maximum Drain-Source Voltage.
  • 299mΩ maximum on-resistance.
  • 104W maximum power dissipation.
  • TO-263-3 surface mount package.
  • Wide operating temperature range.

IPB50R299CP Applications

  • Suitable for power supply circuits.
  • Used in motor control applications.
  • Ideal for general switching tasks.
  • Designed for efficient power conversion.

IPB50R299CP FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum Drain-Source Voltage for the IPB50R299CP?

The maximum Drain-Source Voltage is 500V.

What is the maximum RDS(on) for the IPB50R299CP?

The maximum RDS(on) is 299mΩ at 10V.

What is the maximum power dissipation of the IPB50R299CP?

The maximum power dissipation is 104W.

What is the operating temperature range for this transistor?

The operating temperature range is -55°C to 150°C.

What package type is the IPB50R299CP supplied in?

It is supplied in a TO-263-3 package.

How is the IPB50R299CP mounted?

It is a surface mount device.

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