| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,705 pcs
|
1705 pcs | On Request | 1 | On Request | On Request | 14+ | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
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| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
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| Tape & Reel | |
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| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IPB50R250CP is an N-Channel Power MOSFET manufactured by Infineon Technologies. It is designed for high-voltage switching applications with a drain-source voltage rating of 500V and a continuous drain current of 13A at case temperature. The device features a maximum on-resistance of 250mOhm at 7.8A and 10V gate drive.
Electrical characteristics include a maximum input capacitance of 1420pF at 100V drain-source, a maximum gate charge of 36nC at 10V, and a gate threshold voltage of 3.5V at 520µA. The maximum power dissipation is 114W at case temperature, and the operating junction temperature range is -55°C to 150°C.
The MOSFET is housed in a surface-mount TO-263-3 (D²Pak) package with a supplier device package of PG-TO263-3-2. It is suitable for applications requiring efficient power switching and high voltage capability.
| Qty | Low | High |
|---|---|---|
| 1+ | $3.29 | $3.29 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 500V.
It is a surface-mount device in a TO-263 (D²Pak) package.
The operating junction temperature range is -55°C to 150°C.
The RoHS status is listed as compliant, but this information is unverified.
The maximum drain-source on-resistance is 250mOhm at 7.8A and 10V gate drive.
The maximum gate charge is 36nC at 10V gate-source voltage.
The maximum power dissipation is 114W at case temperature.