IPB50N10S3L16ATMA1 Infineon IPB50N10S3L16ATMA1 is an N-Channel enhancement mode power MOSFET with 100V drain-source voltage and 50A continuous drain current. It is housed in a surface-mount TO263-3 (D2Pak) package.
Mfr Part #:

IPB50N10S3L16ATMA1

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
Infineon IPB50N10S3L16ATMA1 is an N-Channel enhancement mode power MOSFET with 100V drain-source voltage and 50A continuous drain current. It is housed in a surface-mount TO263-3 (D2Pak) package.
✓ Total Stock: 2,020 pcs
$ Price Range: $1.02 - $3.36

IPB50N10S3L16ATMA1 Available from 1 distributor

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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2,020 pcs
2020 pcs On Request 1 On Request On Request On Request On Request On Request

IPB50N10S3L16ATMA1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Reverse Recovery Time
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IPB50N10S3L16ATMA1 Description

Short technical summary and product information.

The Infineon IPB50N10S3L16ATMA1 is an N-Channel enhancement mode power MOSFET from the OptiMOS-T family. It features a drain-source voltage (Vds) of 100V and a continuous drain current (Id) of 50A at 25°C case temperature. The device offers a low typical on-resistance of 12.8 mOhm (SMD version, Vgs=10V, Id=50A) and is specified for operation from -55°C to 175°C junction temperature.

 

This MOSFET is 100% avalanche tested and rated for a single-pulse avalanche energy of 330 mJ. It provides fast switching with typical turn-on delay of 10 ns and turn-off delay of 28 ns. The gate threshold voltage ranges from 1.2V to 2.4V, allowing drive at both 4.5V and 10V logic levels.

 

The device is supplied in a PG-TO263-3-2 (D2Pak) surface-mount package and is RoHS compliant. It is qualified to AEC Q101 automotive standards and has an MSL rating of 1 (unlimited) up to 260°C peak reflow temperature.

IPB50N10S3L16ATMA1 Quick Information

Product Type: MOSFET
Series: OptiMOS-T
Canonical Name: Infineon Technologies IPB50N10S3L16ATMA1 N-Channel OptiMOS-T Power MOSFET
Subcategory: Single MOSFET

IPB50N10S3L16ATMA1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected
Lead Free: Yes

IPB50N10S3L16ATMA1 Estimated Pricing

Qty Low High
1+ $3.36 $3.36
10+ $2.18 $2.18
50+ $1.68 $1.68
100+ $1.51 $1.51
500+ $1.23 $1.23
1,000+ $1.13 $1.13
3,000+ $1.02 $1.02

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPB50N10S3L16ATMA1 Features

  • N-Channel enhancement mode power MOSFET.
  • 100V drain-source voltage rating.
  • 50A continuous drain current at 25°C.
  • Low on-resistance of 15.4 mOhm max.
  • AEC Q101 automotive qualified.

IPB50N10S3L16ATMA1 Applications

  • Used in automotive power management systems.
  • Suitable for DC-DC converter circuits.
  • Ideal for motor control applications.
  • Applicable in high-efficiency power supplies.

IPB50N10S3L16ATMA1 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the IPB50N10S3L16ATMA1?

The maximum drain-source voltage (Vds) is 100V.

What is the continuous drain current rating?

The continuous drain current is 50A at Tc=25°C and 37A at Tc=100°C, with Vgs=10V.

What is the operating temperature range?

The operating junction temperature range is -55°C to 175°C.

Is the IPB50N10S3L16ATMA1 RoHS compliant?

Yes, the device is RoHS compliant as stated in the datasheet.

What package is the IPB50N10S3L16ATMA1 available in?

It is available in a PG-TO263-3-2 (D2Pak) surface-mount package.

What is the maximum on-resistance at Vgs=10V?

The maximum on-resistance is 15.4 mOhm for the SMD version at Vgs=10V and Id=50A.

Is this MOSFET qualified for automotive applications?

Yes, it is AEC Q101 qualified.

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