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1,000 pcs
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1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon IPB50N10S3L-16 is an N-channel enhancement mode power MOSFET from the OptiMOS™-T family. It features a drain-source breakdown voltage of 100V and a continuous drain current of up to 50A at 25°C case temperature.
Key electrical characteristics include a maximum on-state resistance of 15.7 mOhms at a gate-source voltage of 10V and a drain current of 50A. The device also offers a typical gate threshold voltage of 1.7V.
With an operating temperature range of -55°C to +175°C and a junction-to-case thermal resistance of 1.5 K/W, this MOSFET is suitable for demanding applications. It is available in the PG-TO263-3-2 package, designed for surface mounting.
This component is automotive AEC Q101 qualified and RoHS compliant, making it suitable for a wide range of automotive and industrial applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 100V.
The typical gate threshold voltage is 1.7V.
The maximum continuous drain current is 50A at 25°C case temperature.
The maximum on-state resistance is 15.7 mOhms at VGS=10V and ID=50A.
The operating and storage temperature range is -55°C to +175°C.
This MOSFET is in the PG-TO263-3-2 package.
The RoHS status is RoHS3 Compliant.