IPB45N06S3-16 N-Channel MOSFET from Infineon Technologies with 55V drain-source breakdown voltage and 45A continuous drain current. Features low on-resistance of 15.4mOhm and is AEC Q101 qualified for automotive applications.
Mfr Part #:

IPB45N06S3-16

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
N-Channel MOSFET from Infineon Technologies with 55V drain-source breakdown voltage and 45A continuous drain current. Features low on-resistance of 15.4mOhm and is AEC Q101 qualified for automotive applications.
✓ Total Stock: 1,499 pcs

IPB45N06S3-16 Available from 1 distributor

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1,499 pcs
1499 pcs On Request 1 On Request On Request 06+ On Request On Request

IPB45N06S3-16 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Reverse Recovery Time
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IPB45N06S3-16 Description

Short technical summary and product information.

The IPB45N06S3-16 is an N-channel enhancement mode MOSFET from Infineon Technologies, part of the OptiMOS-T2 family. It is designed for high-efficiency power switching applications. Key electrical specifications include a drain-source breakdown voltage of 55V, continuous drain current of 45A at 25°C (33A at 100°C), and a maximum on-resistance of 15.4mOhm at Vgs=10V and Id=23A. The device features a total gate charge of 57nC, input capacitance of 2980pF, and is avalanche rated at 145mJ single pulse. The operating junction temperature range is -55°C to 175°C.

 

The MOSFET is housed in a TO-263-3 (D²Pak) surface mount package with a junction-to-case thermal resistance of 2.3 K/W. It is AEC Q101 qualified for automotive applications and is RoHS compliant (green product). The device is 100% avalanche tested and has an MSL1 moisture sensitivity level. Cross-reference parts include the IPI45N06S3-16 (TO-262) and IPP45N06S3-16 (TO-220) which share the same die. Typical applications include automotive power systems, DC-DC converters, motor drives, and high-current load switching.

IPB45N06S3-16 Quick Information

Product Type: N-Channel MOSFET
Series: OptiMOS-T2
Canonical Name: Infineon IPB45N06S3-16 N-Channel MOSFET
Subcategory: Single

IPB45N06S3-16 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IPB45N06S3-16 Features

  • N-channel enhancement mode MOSFET.
  • 55V drain-source breakdown voltage.
  • 45A continuous drain current at 25°C.
  • Low on-resistance of 15.4mOhm.
  • AEC Q101 qualified for automotive.

IPB45N06S3-16 Applications

  • Suitable for automotive power switching.
  • Used in DC-DC converters and motor drives.
  • Ideal for high-current load switching.
  • Applicable in battery management systems.

IPB45N06S3-16 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the IPB45N06S3-16?

The drain-source breakdown voltage is 55V.

What package is the IPB45N06S3-16 available in?

The device is available in a TO-263-3 (D²Pak) surface mount package.

What is the operating temperature range of the IPB45N06S3-16?

The operating junction temperature range is -55°C to 175°C.

Is the IPB45N06S3-16 RoHS compliant?

Yes, the device is RoHS compliant (green product).

What is the gate threshold voltage of the IPB45N06S3-16?

The gate threshold voltage ranges from 2.1V (min) to 4V (max) with a typical value of 3V at Id=30µA.

What is the on-resistance of the IPB45N06S3-16?

The maximum on-resistance is 15.4mOhm at Vgs=10V and Id=23A.

Is the IPB45N06S3-16 automotive qualified?

Yes, it is AEC Q101 qualified for automotive applications.

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