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IPB407N30N The Infineon IPB407N30N is an N-channel MOSFET with a 300V drain-source voltage and a low on-resistance of 40.7mOhm. It is suitable for power management applications.
Mfr Part #:

IPB407N30N

Available from 2 distributors
Mfr Name: Infineon
Infineon
The Infineon IPB407N30N is an N-channel MOSFET with a 300V drain-source voltage and a low on-resistance of 40.7mOhm. It is suitable for power management applications.
✓ Total Stock: 590 pcs

IPB407N30N Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Smaxon Electronics ✓
Non-Authorised Inventory information
440 pcs
On Request
440 pcs On Request 1 On Request On Request 18+ On Request On Request
Optech Co.,Limited ✓
Non-Authorised Inventory information
150 pcs
On Request
150 pcs On Request 1 On Request On Request 15+ On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

IPB407N30N Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Halogen Free
Mounting Type
Operating Temperature
Package / Case
SVHC Present
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IPB407N30N Description

Short technical summary and product information.

The Infineon IPB407N30N is a high-performance N-channel MOSFET designed for power management applications. It features a maximum drain-source voltage (VDS) of 300V and a very low on-resistance (RDS(on)) of 40.7mΩ at a gate-source voltage of 10V and a drain current of 44A.

 

This MOSFET offers a continuous drain current (ID) of 44A at 25°C and 34A at 100°C, with a pulsed drain current capability of up to 176A. It is optimized for hard commutation ruggedness and includes a fast diode with reduced Qrr.

 

The IPB407N30N operates at temperatures ranging from -55°C to 175°C and is housed in a PG-TO 263-3 surface-mount package. It is Pb-free and halogen-free, complying with RoHS and IEC61249-2-21 standards.

IPB407N30N Quick Information

Product Type: MOSFET
Canonical Name: IPB407N30N N-channel MOSFET
Subcategory: N-channel

IPB407N30N Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-free lead plating

IPB407N30N Features

  • 300V drain-source voltage rating.
  • Low 40.7mOhm on-resistance.
  • 44A continuous drain current.
  • 175°C maximum operating temperature.
  • Pb-free and halogen-free.

IPB407N30N Applications

  • Power management in industrial systems
  • Switching power supplies and converters
  • Motor control and drive circuits
  • High-efficiency DC-DC converters
  • Hard-switching power topologies

IPB407N30N FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the IPB407N30N?

The maximum drain-source voltage is 300V.

What is the maximum on-resistance of the IPB407N30N?

The maximum on-resistance is 40.7 mΩ.

What is the continuous drain current at 25°C?

The continuous drain current at 25°C is 44A.

What is the operating temperature range for this MOSFET?

The operating and storage temperature range is -55 to 175 °C.

What package type is the IPB407N30N in?

The IPB407N30N is in a PG-TO 263-3 package.

Is the IPB407N30N RoHS compliant?

Yes, the RoHS status is RoHS3 Compliant.

Is the IPB407N30N halogen-free?

Yes, it is halogen-free.

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