Mfr Part #:

IPB35N10S3L-26

Mfr Name: Infineon

The Infineon IPB35N10S3L-26 is an N-channel Power MOSFET designed for high-performance applications. It features a 100V breakdown voltage and a continuous drain current of 35A.

✓ Total Stock: 9 pcs

$ Price Range: $2.93

IPB35N10S3L-26 Available from 1 distributor

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Bristol Electronics ✓ Non-Authorised Inventory information	9 pcs On Request	9 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

IPB35N10S3L-26 Specifications Quick View

Most important parameters for selection – full specs in datasheet.

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Category	New Products
Manufacturer Name	Infineon
Halogen Free	Yes
Mounting Type	Surface Mount
Power Dissipation	71 W
Reverse Recovery Time	79 ns

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IPB35N10S3L-26 Description

Short technical summary and product information.

The Infineon IPB35N10S3L-26 is an N-channel enhancement mode Power MOSFET from the OptiMOS™-T family. It is Automotive AEC Q101 qualified and rated for a continuous drain current of 35A at 25°C case temperature with a VGS of 10V. The MOSFET offers a drain-source breakdown voltage of 100V and a low on-state resistance (RDS(on)) as low as 20.3 mΩ at VGS=10V and ID=35A.

This device operates at temperatures up to 175°C and is RoHS compliant. It is available in a PG-TO263-3-2 package, suitable for surface mounting. The MOSFET is 100% avalanche tested, ensuring reliability in demanding applications.

Key electrical characteristics include a gate threshold voltage between 1.2V and 2.4V, and various capacitance values such as input capacitance (Ciss) up to 2700pF. Dynamic characteristics include a typical turn-on delay time of 6ns and a fall time of 3ns.

The IPB35N10S3L-26 is designed for power management applications where high efficiency and reliability are critical. Its robust construction and automotive qualification make it suitable for automotive and industrial systems.

IPB35N10S3L-26 Quick Information

Product Type: N-channel Power MOSFET

Series: OptiMOS™-T

Canonical Name: Infineon IPB35N10S3L-26 N-channel Power MOSFET

Subcategory: N-Channel

IPB35N10S3L-26 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

Lead Free: Yes

IPB35N10S3L-26 Estimated Pricing

Qty	Low	High
1+	$2.93	$2.93

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPB35N10S3L-26 Features

N-channel enhancement mode MOSFET.
Automotive AEC Q101 qualified.
100V drain-source breakdown voltage.
35A continuous drain current.
Low RDS(on) down to 20.3 mΩ.

IPB35N10S3L-26 Applications

Ideal for motor drive and inverter circuit designs.
Suitable for DC-DC converter and power supply stages.
Used in automotive battery management and charging systems.
Fits industrial motor control and solenoid driver boards.
Fits renewable energy inverter and grid tie circuits.

IPB35N10S3L-26 FAQs

6 frequently asked questions generated from this part’s specifications.

What is the maximum drain-source breakdown voltage?

100V at VGS=0V and ID=1mA.

What package type does this component use?

PG-TO263-3-2 surface mount housing.

What is the operating temperature range?

-55°C to +175°C for both junction and storage.

What is the maximum on-state resistance?

26.3mΩ at VGS=10V and 32.2mΩ at VGS=4.5V.

How much pulsed current can the device handle?

140A at a case temperature of 25°C.

Is the device avalanche rated?

Yes, it supports a single-pulse avalanche energy of 175mJ at 35A.