| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
436 pcs
|
436 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Reverse Recovery Time | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IPB320N20N3GATMA1 is an N-channel power MOSFET from Infineon Technologies' OptiMOS 3 series. It features a 200V drain-source breakdown voltage and a continuous drain current of 34A at 25°C case temperature, with a maximum drain-source on-resistance of 32 mΩ at 10V gate drive. The device is capable of handling up to 136W power dissipation at 25°C and operates over a junction temperature range of -55°C to 175°C.
This MOSFET is optimized for high-frequency switching applications and synchronous rectification. It offers a low gate charge of 29 nC and fast switching times with typical turn-on delay of 11 ns and turn-off delay of 21 ns. The avalanche energy rating is 190 mJ single pulse.
The device is surface-mounted in a D2PAK (TO-263-3) package, also known as PG-TO263-3. It is RoHS compliant and halogen-free according to IEC61249-2-21. The through-hole variants are available as IPP320N20N3 G (TO-220) and IPI320N20N3 G (TO-262).
| Qty | Low | High |
|---|---|---|
| 1+ | $4.00 | $4.00 |
| 10+ | $2.62 | $2.62 |
| 100+ | $1.84 | $1.84 |
| 500+ | $1.52 | $1.52 |
| 1,000+ | $1.41 | $1.41 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
200V.
D2PAK (TO-263-3, PG-TO263-3).
-55°C to 175°C (junction temperature).
Yes, RoHS3 compliant.
34A at 25°C case temperature, 22A at 100°C.
29 nC at 10V gate-source voltage.
Turn-on delay 11 ns, rise time 9 ns, turn-off delay 21 ns, fall time 4 ns.