| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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470 pcs
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470 pcs | On Request | 1 | On Request | On Request | 1734+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IPB200N15N3G is a surface-mount N-Channel MOSFET manufactured by Infineon Technologies, part of their 12V-300V N-channel power MOSFET portfolio. It is designed for high-efficiency power switching applications. Key electrical specifications include a maximum drain-source voltage (Vds) of 150 V, continuous drain current (Id) of 50 A at Tc, and a maximum drain-source on-resistance (Rds(on)) of 20 mOhm at Vgs = 10 V and Id = 50 A. The device has a gate threshold voltage (Vgs(th)) of up to 4 V at Id = 90 µA and a recommended drive voltage range of 8 V to 10 V for achieving minimum on-resistance. The input capacitance (Ciss) is 1820 pF at Vds = 75 V, and the total gate charge (Qg) is 31 nC at Vgs = 10 V. The MOSFET can dissipate up to 150 W at Tc and operates across a junction temperature range of -55°C to 175°C. It is housed in a PG-TO263-3-2 package (TO-263-3, D²Pak), suitable for automated surface-mount assembly.
The maximum drain-source voltage (Vdss) is 150 V.
The continuous drain current (Id) is 50 A at case temperature (Tc).
The maximum drain-source on-resistance (Rds(on)) is 20 mOhm at Vgs = 10 V and Id = 50 A.
The junction operating temperature range is -55°C to 175°C.
It is offered in a PG-TO263-3-2 package (TO-263-3, D²Pak).
RoHS compliance is claimed but not independently verified; treat as low-confidence.