| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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65 pcs
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65 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name |
This Infineon IPB180P04P403ATMA2 is a P-channel MOSFET with a maximum drain-source voltage (Vds) of 40V and a continuous drain current (Id) of 180A. It offers a low maximum drain-source on-resistance (Rds) of 2.8mΩ, indicating efficient current conduction.
The MOSFET operates in enhancement mode and is housed in a TO-263 surface-mount package, making it suitable for various electronic designs requiring efficient power switching.
Key electrical characteristics include a typical forward voltage (Vf) of 1.2V. The component is designed for surface mounting, facilitating integration into printed circuit boards.
This part is part of the iPB series from Infineon, known for its performance in power management applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.93 | $2.93 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
40V maximum.
180A maximum.
2.8mΩ maximum.
TO-263 surface mount.
P-Channel.
1.2V typical.
Surface mount.