| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
8 pcs
|
8 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Halogen Free | |
| Industrial Grade | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Power Dissipation | |
| Reverse Recovery Time | |
| SVHC Present |
The Infineon IPB180P04P4-03 is a P-channel, normal level, enhancement mode MOSFET from the OptiMOS®-P2 series. This AEC qualified component is designed for high-performance applications.
Key electrical specifications include a drain-source breakdown voltage of -40V and a maximum continuous drain current of -180A at 25°C. The drain-source on-state resistance is a low 2.8mΩ maximum at -100A. Dynamic characteristics include input capacitance up to 17640pF and output capacitance up to 5290pF.
This MOSFET operates over a wide temperature range from -55°C to +175°C. It features a thermal resistance junction-to-case of 1.0 K/W. The package type is PG-TO263-7-3, suitable for surface mounting.
The IPB180P04P4-03 is 100% avalanche tested and features a green package compliant with RoHS standards. It is rated for MSL1 up to 260°C peak reflow.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.93 | $2.93 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
-40V
-4.0V
2.0mΩ
-180A
150W
-55°C to +175°C
PG-TO263-7-3