IPB180N10S403ATMA1 IPB180N10S403ATMA1 is an N-Channel power MOSFET from Infineon Technologies, rated for 100V drain-source voltage and 180A continuous drain current. It features a low on-resistance of 3.3mΩ and comes in a TO263-7 surface-mount package.
Mfr Part #:

IPB180N10S403ATMA1

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
IPB180N10S403ATMA1 is an N-Channel power MOSFET from Infineon Technologies, rated for 100V drain-source voltage and 180A continuous drain current. It features a low on-resistance of 3.3mΩ and comes in a TO263-7 surface-mount package.
✓ Total Stock: 267 pcs
$ Price Range: $2.47 - $6.70

IPB180N10S403ATMA1 Available from 1 distributor

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267 pcs
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IPB180N10S403ATMA1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Reverse Recovery Time (trr)
SVHC Present
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IPB180N10S403ATMA1 Description

Short technical summary and product information.

The IPB180N10S403ATMA1 is an N-Channel enhancement-mode power MOSFET from Infineon Technologies, part of the OptiMOS-T2 family. It is designed for high-current switching applications, offering a maximum drain-source voltage of 100V and a continuous drain current of 180A at 25°C case temperature. The device features a low drain-source on-resistance of 3.3mΩ (maximum) at VGS=10V and ID=100A, which helps minimize conduction losses.

 

This MOSFET is AEC Q101 qualified and RoHS compliant, making it suitable for automotive and industrial applications. It can operate over a junction temperature range of -55°C to +175°C and is rated for a maximum power dissipation of 250W. The device is 100% avalanche tested, with a single-pulse avalanche energy rating of 530mJ.

 

The IPB180N10S403ATMA1 is available in a PG-TO263-7-3 surface-mount package (TO-263-7, D²Pak with 6 leads plus tab). It offers fast switching performance with typical turn-on delay of 20ns, rise time of 10ns, turn-off delay of 40ns, and fall time of 45ns. The gate charge total is 108nC typical, which should be considered when designing the gate drive circuit.

IPB180N10S403ATMA1 Quick Information

Product Type: MOSFET
Series: OptiMOS-T2
Canonical Name: N-Channel 100V 180A MOSFET (OptiMOS-T2)
Subcategory: Power MOSFET

IPB180N10S403ATMA1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): MSL1 - Unlimited up to 260°C peak reflow
REACH Status: REACH Unaffected

IPB180N10S403ATMA1 Estimated Pricing

Qty Low High
1+ $6.70 $6.70
10+ $4.50 $4.50
100+ $3.26 $3.26
500+ $2.72 $2.72
1,000+ $2.65 $2.65
2,000+ $2.47 $2.47

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPB180N10S403ATMA1 Features

  • N-Channel enhancement mode MOSFET.
  • 100V maximum drain-source voltage.
  • 180A continuous drain current at 25°C.
  • Low on-resistance of 3.3mΩ.
  • AEC Q101 qualified for automotive use.

IPB180N10S403ATMA1 Applications

  • Suitable for automotive power switching.
  • Used in DC-DC converter circuits.
  • Ideal for motor control applications.
  • Applicable in power supply designs.

IPB180N10S403ATMA1 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the IPB180N10S403ATMA1?

The maximum drain-source voltage (Vdss) is 100V.

What is the continuous drain current rating of this MOSFET?

The continuous drain current is 180A at Tc=25°C and 134A at Tc=100°C (with VGS=10V).

What is the on-resistance of the IPB180N10S403ATMA1?

The maximum drain-source on-resistance is 3.3mΩ at VGS=10V and ID=100A.

What is the operating temperature range of this device?

The operating junction temperature range is -55°C to +175°C.

Is the IPB180N10S403ATMA1 RoHS compliant?

Yes, the device is RoHS compliant as stated in the datasheet.

What is the package type of this MOSFET?

The package is PG-TO263-7-3, which is a TO-263-7 (D²Pak) surface-mount package with 6 leads plus tab.

What is the maximum power dissipation of this device?

The maximum power dissipation is 250W at Tc=25°C.

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