| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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1,340 pcs
|
1340 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | 17+ | On Request | On Request |
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The Infineon IPB180N10S4-02 is an N-channel enhancement mode MOSFET from the OptiMOSTM-T2 series. It is AEC Q101 qualified and designed for demanding automotive and power applications.
Key electrical specifications include a drain-source breakdown voltage of 100V and a continuous drain current of 180A at 25°C. The on-state resistance (Rds(on)) is as low as 2.0mΩ typical at 100A and 10V gate-source voltage. It operates at temperatures up to 175°C.
This MOSFET features a thermal resistance of 0.5 K/W (junction-to-case) and a power dissipation of 300W at 25°C. It is packaged in a PG-TO263-7-3 surface-mount package.
The device is RoHS compliant and 100% avalanche tested, making it suitable for high-reliability applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 100V.
The typical gate threshold voltage is 2.7V.
The maximum continuous drain current at 25°C is 180A.
The typical on-state resistance is 2.0mΩ at 10V gate drive and 100A drain current.
The maximum operating temperature is 175°C.
It is supplied in the PG-TO263-7-3 package.
Yes, it is RoHS compliant.