| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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214 pcs
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214 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon IPB180N08S4-02 is an N-channel enhancement mode OptiMOS™-T2 Power MOSFET designed for high-performance applications. It features a drain-source breakdown voltage of 80V and a continuous drain current capability of 180A at 25°C.
This MOSFET boasts an ultra-low RDS(on) of typically 1.8mΩ at 100A and 10V gate drive, contributing to high efficiency. Key electrical characteristics include a gate threshold voltage between 2.0V and 4.0V, and various capacitance values such as Ciss, Coss, and Crss.
Packaged in a PG-TO263-7-3 surface-mount package, the IPB180N08S4-02 is suitable for demanding power management tasks. It operates at temperatures up to 175°C and is AEC Q101 qualified, making it robust for automotive and industrial use. The device is also RoHS compliant.
Thermal performance is supported by a low junction-to-case thermal resistance of 0.54 K/W, enabling efficient heat dissipation. It is 100% avalanche tested, ensuring reliability under transient stress conditions.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 80V.
The typical gate threshold voltage is 3.0V.
The maximum continuous drain current is 180A.
The typical drain-source on-state resistance is 1.8mΩ.
The operating temperature range is -55°C to +175°C.
It comes in a PG-TO263-7-3 package.
Yes, it is RoHS3 Compliant.