| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,472 pcs
|
1472 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
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| Power Dissipation |
The Infineon IPB180N06S4-H1 is an N-channel enhancement mode OptiMOS®-T2 Power MOSFET. It is AEC Q101 qualified and rated for a continuous drain current of 180A at 25°C and 100°C, with a pulsed drain current up to 720A. The device features a low drain-source on-state resistance (Rds(on)) of typically 1.3 mΩ at 100A and 10V gate-source voltage.
With a drain-source breakdown voltage of 60V and a maximum operating temperature of 175°C, this MOSFET is suitable for demanding automotive applications. It also offers a gate source voltage range of ±20V and a power dissipation of 250W at 25°C.
The IPB180N06S4-H1 comes in a PG-TO263-7-3 package, designed for surface mounting. Its thermal resistance from junction to case is 0.60 K/W, and from junction to ambient is 62 K/W with a minimal footprint on a PCB with 6 cm² cooling area.
Key electrical characteristics include input capacitance of up to 21900 pF, output capacitance up to 5360 pF, and reverse transfer capacitance up to 320 pF. Dynamic characteristics such as turn-on delay time, rise time, turn-off delay time, and fall time are also specified, along with gate charge parameters.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 60V.
The typical gate threshold voltage is 3.0V.
The maximum continuous drain current is 180A.
The maximum operating temperature is 175°C.
The package type is PG-TO263-7-3.
Yes, it is RoHS3 Compliant.
The Moisture Sensitivity Level is 1.