| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,259 pcs
|
1259 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
317 pcs
|
317 pcs | On Request | 1 | On Request | On Request | 12+ | On Request | On Request |
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| Industrial Grade | |
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| Tape & Reel |
The Infineon IPB180N04S4-H0 is an N-channel enhancement mode OptiMOS®-T2 Power-Transistor designed for automotive applications. It features a drain-source breakdown voltage of 40V and a continuous drain current of 180A at 25°C case temperature.
This MOSFET boasts an ultra-low Rds(on) of 0.9 mΩ typical at 10V gate-source voltage and 100A drain current, contributing to high efficiency. It is 100% avalanche tested and operates at temperatures up to 175°C.
The IPB180N04S4-H0 comes in a PG-TO263-7-3 package, suitable for surface mounting. Its features include AEC qualification and compliance with MSL1 standards up to 260°C peak reflow.
Key electrical characteristics include a gate threshold voltage between 2.0V and 4.0V, and dynamic parameters such as input capacitance up to 17940pF and output capacitance up to 3900pF.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 40V.
The typical gate threshold voltage is 3V.
The typical drain-source on-state resistance is 0.9 mΩ at 10V gate-source voltage and 100A drain current.
The continuous drain current is 180A at 25°C case temperature and 180A at 100°C case temperature.
The maximum operating temperature is 175°C.
The package type is PG-TO263-7-3.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.