| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,340 pcs
|
1340 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Conflict Minerals | |
| Halogen Free | |
| Mounting Type | |
| Power Dissipation | |
| SVHC Present |
The Infineon IPB180N04S4-01 is an N-channel OptiMOS®-T2 Power MOSFET designed for high-performance applications. It offers a drain-source breakdown voltage of 40V and a continuous drain current of up to 180A at 25°C.
Key electrical characteristics include a low drain-source on-state resistance (RDS(on)) of typically 1.1mΩ at 100A and 10V gate-source voltage, and a gate threshold voltage ranging from 2.0V to 4.0V. The MOSFET also features fast switching times with typical rise and fall times of 2ns and 4ns respectively.
With an operating temperature range of -55°C to +175°C and a junction-to-case thermal resistance of 0.8 K/W, this device is suitable for demanding thermal environments. It is supplied in a PG-TO263-7-3 surface-mount package.
This AEC qualified component is 100% avalanche tested and RoHS compliant, making it a reliable choice for various power management solutions.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 40V.
The typical gate threshold voltage is 3.0V.
The maximum drain-source on-state resistance is 1.3mΩ.
The continuous drain current at 25°C is 180A.
The maximum operating temperature is 175°C.
The package type is PG-TO263-7-3.
The RoHS status is RoHS3 Compliant.