DistyParts Icon
IPB17N25S3-100 The Infineon IPB17N25S3-100 is an N-channel OptiMOS™-T Power-Transistor with a 250V drain-source breakdown voltage and 17A continuous drain current. It is supplied in a TO-263 package.
Mfr Part #:

IPB17N25S3-100

Available from 1 distributors
Mfr Name: Infineon
Infineon
The Infineon IPB17N25S3-100 is an N-channel OptiMOS™-T Power-Transistor with a 250V drain-source breakdown voltage and 17A continuous drain current. It is supplied in a TO-263 package.
✓ Total Stock: 4,737 pcs
$ Price Range: $2.40

IPB17N25S3-100 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Xingangxin ✓
Non-Authorised Inventory information
4,737 pcs
On Request
4737 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

IPB17N25S3-100 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Input Capacitance
Mounting Type
Power Dissipation
Reverse Recovery Time
View Similar Products (0)

IPB17N25S3-100 Description

Short technical summary and product information.

The Infineon IPB17N25S3-100 is an N-channel enhancement mode power MOSFET from the OptiMOS™-T family. It features a maximum drain-source breakdown voltage of 250V and a continuous drain current of 17A at 25°C case temperature.

 

This MOSFET offers a typical drain-source on-state resistance of 85mΩ at 10V gate-source voltage and 17A drain current. Key electrical characteristics include a gate threshold voltage typically around 3V and low gate charge values, with a total gate charge of 14nC typical.

 

Designed for demanding applications, the IPB17N25S3-100 operates at temperatures up to 175°C. It is AEC qualified and 100% avalanche tested, ensuring reliability. The component is packaged in a PG-TO263-3-2 surface-mount package.

 

Environmental compliance includes RoHS3 compliance and an MSL1 rating. The device is suitable for DC/DC converters and inverter applications requiring high performance and reliability.

IPB17N25S3-100 Quick Information

Product Type: MOSFET
Series: OptiMOS™-T
Canonical Name: Infineon IPB17N25S3-100 N-channel OptiMOS™-T Power-Transistor
Subcategory: N-channel Power MOSFET

IPB17N25S3-100 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IPB17N25S3-100 Estimated Pricing

Qty Low High
1+ $2.40 $2.40

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPB17N25S3-100 Features

  • 250V drain-source breakdown voltage
  • 17A continuous drain current
  • 85mΩ typical on-state resistance
  • 14nC total gate charge
  • TO-263 surface mount package

IPB17N25S3-100 Applications

  • Suitable for DC/DC converters
  • Used in inverter applications
  • Automotive applications
  • Power management circuits

IPB17N25S3-100 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source breakdown voltage for the IPB17N25S3-100?

The maximum drain-source breakdown voltage is 250V.

What is the continuous drain current at 25°C?

The continuous drain current is 17A at 25°C case temperature.

What is the typical on-state resistance?

The typical drain-source on-state resistance is 85mW at VGS=10V and ID=17A.

What is the operating temperature range?

The operating temperature range is -55°C to +175°C.

What package type is the IPB17N25S3-100 supplied in?

It is supplied in a PG-TO263-3-2 package.

Is the IPB17N25S3-100 RoHS compliant?

Yes, it is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL)?

The Moisture Sensitivity Level is 1 Unlimited.

Home
Account

Categories